Photodiodes - ifw optronics

22 Photodiodes from ifw optronics meet your specification.

Photodiodes from ifw optronics are listed on GoPhotonics. We have compiled a list of Photodiodes from the ifw optronics website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to ifw optronics and their distributors in your region.

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  • Manufacturer : ifw optronics
Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
222 to 392 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
10 pF (Junction)
Responsivity/Photosensitivity:
95 to 190 mA/W
Package Type:
TO-Can
Module:
No
more info
Description: 2 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
215 to 355 nm
Operation Mode:
Photoconductive
Dark Current:
200 fA
Capacitance:
150 pF (Junction)
Responsivity/Photosensitivity:
0.13 to 0.16 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 0.05 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
30 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 0.25 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
75 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
215 to 358 nm
Operation Mode:
Photoconductive
Dark Current:
200 fA
Capacitance:
70 pF (Junction)
Responsivity/Photosensitivity:
0.17 to 0.135 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 0.25 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
75 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 2 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
215 to 355 nm
Operation Mode:
Photoconductive
Dark Current:
200 fA
Capacitance:
150 pF (Junction)
Responsivity/Photosensitivity:
0.13 to 0.16 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
215 to 358 nm
Operation Mode:
Photoconductive
Dark Current:
200 fA
Capacitance:
70 pF (Junction)
Responsivity/Photosensitivity:
0.17 to 0.135 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
13 to 20 pF (Junction)
Responsivity/Photosensitivity:
0.18 to 0.16 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 0.05 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
30 pF (Junction)
Responsivity/Photosensitivity:
0.16 to 0.144 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 1 mm² active area VIS/NIR-detector Silicon-photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA
Capacitance:
40 pF
Responsivity/Photosensitivity:
0.62 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
222 to 392 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
10 pF (Junction)
Responsivity/Photosensitivity:
95 to 190 mA/W
Package Type:
TO-Can
Module:
No
more info
Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
222 to 392 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
10 pF (Junction)
Responsivity/Photosensitivity:
95 to 190 mA/W
Package Type:
TO-Can
Module:
No
more info
Description: 5 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
215 to 360 nm
Operation Mode:
Photoconductive
Dark Current:
500 fA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.14 to 0.16 A/W
Package Type:
TO-Can
Module:
No
more info
Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Dark Current:
10 fA
Capacitance:
13 to 20 pF (Junction)
Responsivity/Photosensitivity:
0.18 to 0.16 A/W
Package Type:
TO-Can
Module:
No
more info
1 - 15 of 22 Photodiodes

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