Photodiodes - Go!Foton

12 Photodiodes from Go!Foton meet your specification.
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  • Manufacturer : Go!Foton
Description: Power Monitor PIN Photodiode, Low Leakage
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1625 nm
Dark Current:
0.01 to 2 nA
Capacitance:
1.3 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
more info
Description: InGaAs Avalanche Photodiode (APD) 10 Gbps Chip on Carrier with Integrated Lens
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
50 nA
Capacitance:
0.3 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
more info
Description: InGaAs Avalanche Photodiode (APD) Module for OTDR / SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
more info
Description: InGaAs Avalanche Photodiode (APD) 10 Gbps
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
50 nA
Capacitance:
0.7 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
more info
Description: InGaAs PIN Photodiode with Large Photosensitive Area in TO Can Package
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
50 nA
Capacitance:
100 to 150 pF
Responsivity/Photosensitivity:
0.95 to 1.0 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
more info
Description: InGaAs Avalanche Photodiode (APD) 2.5 Gbps Front-Ill┬Áminated Chip GPON GEPON SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
more info
Description: Power Monitor PIN Photodiode, Low Leakage
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1625 nm
Dark Current:
0.02 to 5 nA
Capacitance:
2.8 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
more info
Description: InGaAs Avalanche Photodiode (APD) 2.5 Gbps Chip or Chip on Carrier
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
50 nA
Capacitance:
0.7 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
more info
Description: InGaAs-based PIN Photodiode from 950 to 1625 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
50 nA
Capacitance:
100 to 150 pF
Responsivity/Photosensitivity:
0.95 to 1.0 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
more info
Description: Power Monitor PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1525 to 1565 nm
Dark Current:
5 nA
Capacitance:
12 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
more info
1 - 10 of 12 Photodiodes
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