Photodiodes

20 Photodiodes from 2 Manufacturers meet your specification.
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  • Manufacturer : Go!Foton, Bentham Instruments
Description: InGaAs Avalanche Photodiode (APD) 2.5 Gbps Front-Illµminated Chip GPON GEPON SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
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Description: The DH_INSB cryogenically cooled indium antimonide detector offers the best performance to 5.5µm
Photodetector Type:
PN
Photodiode Material:
Indium Antimonide (InSb)
Wavelength Range:
1000 to 5500 nm
Operation Mode:
Photovoltaic
Package Type:
Module with Connector
Configuration:
Single
Channels:
Single
Module:
Yes
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Description: Power Monitor PIN Photodiode, Low Leakage
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1625 nm
Dark Current:
0.02 to 5 nA
Capacitance:
2.8 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: The DH_PBS_TE cooled lead sulphide photodiode offers high responsivity to 3µm and the convenience of thermo-electric cooling.
Photodetector Type:
PN
Photodiode Material:
PbS
Wavelength Range:
1000 to 3000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
2 x 105 V.W-1
Package Type:
Module with Connector
Configuration:
Single
Channels:
Single
Module:
Yes
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Description: InGaAs Avalanche Photodiode (APD) Module for OTDR / SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: The DH_PBSE_TE cooled lead selenide photodiode offers wide spectral responsivity to 5µm and the convenience of thermo-electric cooling.
Photodetector Type:
PN
Photodiode Material:
PbSe
Wavelength Range:
1000 to 5000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
2 x 104 V.W-1
Package Type:
Module with Connector
Configuration:
Single
Channels:
Single
Module:
Yes
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Description: InGaAs Avalanche Photodiode (APD) 1.25 Gbps with TIA for burst-mode
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Responsivity/Photosensitivity:
0.8 to 1.0 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: The DH_IGA-EX_TE indium gallium arsenide photodiode extends the high responsivity and excellent performance of the DH_IGA InGaAs further into the infrared to 2500nm
Photodetector Type:
PN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 nA
Responsivity/Photosensitivity:
1.07 A/W
Package Type:
Module with Connector
Configuration:
Single
Channels:
Single
Module:
Yes
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Description: Power Monitor PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1525 to 1565 nm
Dark Current:
5 nA
Capacitance:
12 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: The DH_IGA indium gallium arsenide photodiode offers optimal performance up to 1700nm
Photodetector Type:
PN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 nA
Responsivity/Photosensitivity:
1.07 A/W
Package Type:
Module with Connector
Configuration:
Single
Channels:
Single
Module:
Yes
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