Photodiodes

59 Photodiodes from 2 Manufacturers meet your specification.
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  • Manufacturer : Go!Foton, Luna Innovations
Description: InGaAs Avalanche Photodiode (APD) 2.5 Gbps Front-Ill┬Áminated Chip GPON GEPON SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
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Description: Red Enhanced Ultra Low Capacitance Photodiodes Leaded Packages
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Dark Current:
2.0 to 8.0 nA
Capacitance:
0.5 to 5.6 pF
Responsivity/Photosensitivity:
0.50 to 0.55 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
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Description: Power Monitor PIN Photodiode, Low Leakage
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1625 nm
Dark Current:
0.02 to 5 nA
Capacitance:
2.8 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: Blue Enhanced Silicon Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Dark Current:
1.6 to 6.4 nA
Capacitance:
87 to 300 pF
Responsivity/Photosensitivity:
0.20 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) Module for OTDR / SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: Planar Photodiode with BG-18 Filter
Photodetector Type:
Planar
Photodiode Material:
Silicon
Wavelength Range:
400 to 700 nm
Dark Current:
100 nA
Capacitance:
40 pF
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) 1.25 Gbps with TIA for burst-mode
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Responsivity/Photosensitivity:
0.8 to 1.0 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: Blue Enhanced Photoconductive Silicon Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Dark Current:
5 to 15 nA
Capacitance:
120 pF
Responsivity/Photosensitivity:
0.15 to 0.17 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
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Description: Power Monitor PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1525 to 1565 nm
Dark Current:
5 nA
Capacitance:
12 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: Red Enhanced Silicon Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Dark Current:
30 to 120 nA
Capacitance:
300 to 1490 pF
Responsivity/Photosensitivity:
0.32 to 0.55 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
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