Photodiodes

15 Photodiodes from 2 Manufacturers meet your specification.
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  • Manufacturer : Go!Foton, OSI Optoelectronics
Description: InGaAs Avalanche Photodiode (APD) 2.5 Gbps Front-Ill┬Áminated Chip GPON GEPON SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
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Description: High Speed GaAs Arrays
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
650 to 860 nm
Operation Mode:
Photovoltaic
Dark Current:
0.03 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.63 A/W
Package Type:
Ceramic, Submount
Configuration:
Array
Module:
No
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Description: Power Monitor PIN Photodiode, Low Leakage
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1625 nm
Dark Current:
0.02 to 5 nA
Capacitance:
2.8 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: High Speed InGaAs Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
Ceramic, Submount
Configuration:
Array
Channels:
Multiple
Module:
No
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Description: InGaAs Avalanche Photodiode (APD) Module for OTDR / SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: Large Active Area InGaAs Quadrants
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.5 to 100 nA
Capacitance:
25 to 225 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Through-Hole, TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
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Description: InGaAs Avalanche Photodiode (APD) 1.25 Gbps with TIA for burst-mode
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Responsivity/Photosensitivity:
0.8 to 1.0 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: Power Monitor PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1525 to 1565 nm
Dark Current:
5 nA
Capacitance:
12 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) 10 Gbps Chip on Carrier with Integrated Lens
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
50 nA
Capacitance:
0.3 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
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Description: InGaAs PIN Photodiode with Large Photosensitive Area in TO Can Package
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
50 nA
Capacitance:
100 to 150 pF
Responsivity/Photosensitivity:
0.95 to 1.0 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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