Photodiodes

102 Photodiodes from 4 Manufacturers meet your specification.
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  • Manufacturer : Go!Foton, Philips Photonics, Vishay Intertechnology, Excelitas Technologies
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
1 to 0.2 nA
Capacitance:
120 to 160 pF
Responsivity/Photosensitivity:
0.5 to 0.7 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) Module for OTDR / SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Dark Current:
1 to 10 nA
Capacitance:
1.3 to 4 pF
Package Type:
Surface Mount
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Description: Angle-of-Arrival Photodiode Module from 500-1650 nm
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
500 to 1650 nm
Operation Mode:
Photoconductive
Dark Current:
20 nA
Capacitance:
13.5 pF
Responsivity/Photosensitivity:
0.2 to 0.7 A/W
Package Type:
TO-Can
Configuration:
Array
Module:
Yes
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Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
0.02 to 0.2 nA
Capacitance:
290 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: Power Monitor PIN Photodiode, Low Leakage
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1625 nm
Dark Current:
0.02 to 5 nA
Capacitance:
2.8 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: InGaAs PIN Photodiode from 800 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 20 nA
Capacitance:
2 to 15 pF
Responsivity/Photosensitivity:
0.1 to 1.05 A/W
Package Type:
TO-Can
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Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
0.02 to 0.2 nA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) 10 Gbps Chip on Carrier with Integrated Lens
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
50 nA
Capacitance:
0.3 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
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Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Dark Current:
2 to 30 nA
Capacitance:
25 to 70 pF
Package Type:
Leaded
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1 - 10 of 102 Photodiodes
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