Photodiodes

96 Photodiodes from 4 Manufacturers meet your specification.
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  • Manufacturer : Go!Foton, Philips Photonics, Vishay Intertechnology, Freedom Photonics
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
1 to 0.2 nA
Capacitance:
120 to 160 pF
Responsivity/Photosensitivity:
0.5 to 0.7 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) Module for OTDR / SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: Silicon CMOS Avalanche Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
850 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 nA
Responsivity/Photosensitivity:
0.25 A/W
Package Type:
Chip
Configuration:
Single, Array
Module:
No
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Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Dark Current:
1 to 10 nA
Capacitance:
1.3 to 4 pF
Package Type:
Surface Mount
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Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
0.02 to 0.2 nA
Capacitance:
290 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: Power Monitor PIN Photodiode, Low Leakage
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1625 nm
Dark Current:
0.02 to 5 nA
Capacitance:
2.8 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
0.02 to 0.2 nA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) 10 Gbps Chip on Carrier with Integrated Lens
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
50 nA
Capacitance:
0.3 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
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Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Dark Current:
2 to 30 nA
Capacitance:
25 to 70 pF
Package Type:
Leaded
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Description: Power Monitor PIN Photodiode, Low Leakage
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1625 nm
Dark Current:
0.01 to 2 nA
Capacitance:
1.3 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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