Photodiodes

155 Photodiodes from 3 Manufacturers meet your specification.
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  • Manufacturer : Go!Foton, Philips Photonics, Laser Components
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
0.02 to 0.2 nA
Capacitance:
290 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: Power Monitor PIN Photodiode, Low Leakage
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1625 nm
Dark Current:
0.01 to 2 nA
Capacitance:
1.3 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: Silicon/InGaAs Avalanche Photodiode Modules from 400 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs, Silicon
Wavelength Range:
400 to 1700 nm
Responsivity/Photosensitivity:
0.27 to 500 MV/W
Package Type:
Module with Connector
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Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
0.02 to 0.2 nA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) 10 Gbps Chip on Carrier with Integrated Lens
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
50 nA
Capacitance:
0.3 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
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Description: Lithium Tantalate Doped Dual-Channel Pyroelectric Detector from UV to LWIR Range
Photodetector Type:
PN
Photodiode Material:
Pyroelectric, LiTaO3
Wavelength Range:
2.95 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
60000 to 120000 V/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Dual
Module:
No
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Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
1 to 0.2 nA
Capacitance:
120 to 160 pF
Responsivity/Photosensitivity:
0.5 to 0.7 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) Module for OTDR / SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: 500 µm Diameter Red Enhance Silicon Avalanche Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Dark Current:
5 to 30 nA
Capacitance:
4 to 10 pF
Responsivity/Photosensitivity:
30 to 38 A/W
Package Type:
TO-Can, Surface Mount, Submount, Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: InGaAs Avalanche Photodiode (APD) 10 Gbps
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
50 nA
Capacitance:
0.7 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
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1 - 10 of 155 Photodiodes
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