Photodiodes

59 Photodiodes from 2 Manufacturers meet your specification.
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  • Manufacturer : Go!Foton, Luna Innovations
Description: InGaAs PIN Photodiode with Large Photosensitive Area in TO Can Package
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
50 nA
Capacitance:
100 to 150 pF
Responsivity/Photosensitivity:
0.95 to 1.0 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: InGaAs IR PIN Photodiodes
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Dark Current:
0.1 to 10.0 nA
Capacitance:
2 to 10 pF
Responsivity/Photosensitivity:
0.80 to 0.90 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) 2.5 Gbps with TIA
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: UV Enhanced Silicon Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
250 to 1100 nm
Dark Current:
6 to 30 nA
Capacitance:
102 to 345 pF
Responsivity/Photosensitivity:
0.14 to 0.18 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
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Description: InGaAs-based PIN Photodiode from 950 to 1625 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
50 nA
Capacitance:
100 to 150 pF
Responsivity/Photosensitivity:
0.95 to 1.0 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
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Description: InGaAs IR PIN Photodiodes
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Dark Current:
0.75 to 1.0 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.80 to 1.0 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) 2.5 Gbps Chip or Chip on Carrier
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
50 nA
Capacitance:
0.7 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
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Description: Red Enhanced Silicon Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Dark Current:
5 to 20 nA
Capacitance:
53 to 255 pF
Responsivity/Photosensitivity:
0.32 to 0.55 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) 1.25 Gbps with TIA for burst-mode
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Responsivity/Photosensitivity:
0.8 to 1.0 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: Red Enhanced Ultra Low Capacitance Photodiodes Leaded Packages
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Dark Current:
110 to 425 nA
Capacitance:
22 to 235 pF
Responsivity/Photosensitivity:
0.50 to 0.55 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) Module for OTDR / SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: Cooled Large Area Red Silicon Avalanche Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
350 to 1050 nm
Dark Current:
10 to 25 nA
Capacitance:
25 pF
Responsivity/Photosensitivity:
95 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
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Description: Power Monitor PIN Photodiode, Low Leakage
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1625 nm
Dark Current:
0.02 to 5 nA
Capacitance:
2.8 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: UV Enhanced Silicon Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
250 to 1100 nm
Dark Current:
1 to 6.5 nA
Capacitance:
9 to 87 pF
Responsivity/Photosensitivity:
0.14 to 0.18 A/W
Package Type:
Ceramic, Leaded
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) 2.5 Gbps Front-Illµminated Chip GPON GEPON SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
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1 - 15 of 59 Photodiodes
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