Photodiodes

127 Photodiodes from 4 Manufacturers meet your specification.
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  • Manufacturer : Go!Foton, Philips Photonics, Luna Innovations, Kyoto Semiconductors
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
1 to 0.2 nA
Capacitance:
120 to 160 pF
Responsivity/Photosensitivity:
0.5 to 0.7 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) Module for OTDR / SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: GaN UV Solar blind
Photodiode Material:
AlGaN
Wavelength Range:
220 to 320 nm
Dark Current:
0.1 to 100 pA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.11 A/W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
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Description: Si Avalanche Photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Responsivity/Photosensitivity:
0.45 A/W
Package Type:
Module with Connector
Configuration:
Single
Module:
Yes
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Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
0.02 to 0.2 nA
Capacitance:
290 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: Power Monitor PIN Photodiode, Low Leakage
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1625 nm
Dark Current:
0.02 to 5 nA
Capacitance:
2.8 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: GaN UV Solar blind
Photodiode Material:
GaN
Wavelength Range:
220 to 370 nm
Dark Current:
0.1 to 100 pA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.18 A/W
Package Type:
Leaded
Configuration:
Single
Channels:
Single
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Description: Si / InGaAs Two-tone Surface-Mounted Photodiode from 400 to 1700 nm
Photodetector Type:
PN
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1100 nm(Si), 1000 to 1700 nm(InGaAs)
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 nA(Si), 1 to 10 nA(InGaAs)
Capacitance:
30 to 50 pF(Si), 45 to 60 pF(InGaAs)
Responsivity/Photosensitivity:
0.5 to 0.7 A/W(Si), 0.7 to 0.8 A/W(InGaAs))
Package Type:
Surface Mount
Configuration:
Single
Module:
No
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Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
0.02 to 0.2 nA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche Photodiode (APD) 10 Gbps Chip on Carrier with Integrated Lens
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
50 nA
Capacitance:
0.3 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
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