Photodiodes

34 Photodiodes from 3 Manufacturers meet your specification.
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  • Manufacturer : Go!Foton, Philips Photonics, Broadcom
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
0.02 to 0.2 nA
Capacitance:
290 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: 28-Gb/s InGaAs, 1×4 Array PIN Photodiode with 250-µm Channel Spacing
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Package Type:
Die
Configuration:
Array
Channels:
Quad
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Description: Power Monitor PIN Photodiode, Low Leakage
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1625 nm
Dark Current:
0.01 to 2 nA
Capacitance:
1.3 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
0.02 to 0.2 nA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: InGaAs PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Package Type:
Die
Configuration:
Single
Channels:
Quad
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Description: InGaAs Avalanche Photodiode (APD) 10 Gbps Chip on Carrier with Integrated Lens
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1625 nm
Dark Current:
50 nA
Capacitance:
0.3 pF
Responsivity/Photosensitivity:
0.80 A/W
Package Type:
Chip, Surface Mount
Configuration:
Single
Channels:
Single
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Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
1 to 0.2 nA
Capacitance:
120 to 160 pF
Responsivity/Photosensitivity:
0.5 to 0.7 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: InGaAs PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Package Type:
Die
Configuration:
Single
Channels:
Multiple
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Description: InGaAs Avalanche Photodiode (APD) Module for OTDR / SONET
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
950 to 1625 nm
Dark Current:
1 to 10 nA
Capacitance:
0.9 pF
Responsivity/Photosensitivity:
0.80 to 0.96 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
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Description: 10-Gb/s APD Photodiode Die and, Chip-on-Carrier Avalanche Photodetectors
Photodetector Type:
Avalanche
Photodiode Material:
InAIAs
Wavelength Range:
1260 to 1620 nm
Package Type:
Die
Configuration:
Single
Channels:
Single
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1 - 10 of 34 Photodiodes
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