Photodiodes
54 Photodiodes from 1 Manufacturers meet your specification.
Selected Filters Reset All Manufacturer : Go!Foton, Kryptronic Technologies, Kyoto Semiconductors
Description: 900 to 1700 nm InGaAs Photodiodes with TO-Can package
Description: 900 to 1700 nm InGaAs Photodiodes with TO-Can package
Description: 1200 to 2700 nm InGaAs NIR Photodiode with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1200 to 2700 nm
Operation Mode:
Photovoltaic
Capacitance:
17 pF (Terminal)
Responsivity/Photosensitivity:
1 A/W
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Description: 1200 to 2300 nm InGaAs NIR Photodiode with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
1200 to 2300 nm
Operation Mode:
Photovoltaic
Capacitance:
20 pF (Terminal)
Responsivity/Photosensitivity:
1 A/W
more info
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Description: 900 to 1700 nm Thermoelectrically Cooled InGaAs Photodiodes with TO-Can package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Capacitance:
45 to 60 pF (Terminal)
Responsivity/Photosensitivity:
0.8 to 1 A/W
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Description: 400 to 1000 nm Si Photodiodes with TO-Can package
Description: 400 to 1000 nm Si Photodiodes with TO-Can package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
40 to 160 pA
Capacitance:
4.5 to 5.5 pF
Responsivity/Photosensitivity:
0.35 A/W
more info
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Description: 400 to 1000 nm Si Photodiodes with TO-Can package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 40 pA
Capacitance:
1.2 to 1.6 pF
Responsivity/Photosensitivity:
0.35 A/W
more info
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Description: 400 to 1100 nm Si Photodiodes with DIP / DIL / Thru-Hole package
Description: 400 to 1100 nm Si Photodiodes with DIP / DIL / Thru-Hole package
Description: 400 to 1100 nm Si Photodiodes with DIP / DIL / Thru-Hole package
Description: 400 to 1100 nm Si Photodiodes with DIP / DIL / Thru-Hole package
Description: 400 to 1100 nm Si Photodiodes with DIP / DIL / Thru-Hole package
Description: 400 to 1100 nm Si Photodiodes with DIP / DIL / Thru-Hole package
Description: 650 to 880 nm GaAs Photodiodes with Chip package
1 - 15 of 54 Photodiodes
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