Photodiodes - OSI Optoelectronics

273 Photodiodes from OSI Optoelectronics meet your specification.
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  • Manufacturer : OSI Optoelectronics
Description: Silicon/InGaAs PIN photodiode from 400 to 1800 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1100 nm (Silicon)/1000 to 1800 nm (InGaAs)
Operation Mode:
Photoconductive
Capacitance:
450 pF (Silicon)/300 pF (InGaAs)
Responsivity/Photosensitivity:
0.55 A/W (Silicon)/0.6 A/W (InGaAs)
Package Type:
TO-Can
Configuration:
Single
more info
Description: 400 nm to 1100 nm / 950 nm - 1100 nm, Dual Sandwich Photodiode for Sensing Applications
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm (Silicon)/950 to 1100 nm (Silicon)
Operation Mode:
Photoconductive
Capacitance:
70 pF
Responsivity/Photosensitivity:
0.45 A/W (Silicon)/0.12 A/W (Silicon)
Package Type:
TO-Can
Configuration:
Single
more info
Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.75 to 0.9 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
more info
Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
more info
Description: Silicon/InGaAs PIN photodiode from 400 to 1800 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1100 nm (Silicon)/1000 to 1800 nm (InGaAs)
Operation Mode:
Photoconductive
Capacitance:
450 pF (Silicon)/300 pF (InGaAs)
Responsivity/Photosensitivity:
0.55 A/W (Silicon)/0.6 A/W (InGaAs)
Package Type:
TO-Can
Configuration:
Single
more info
Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
more info
Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.75 to 0.9 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
more info
Description: 900 to 1700 nm Back-Illuminated InGaAs Photodiode/Arrays
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 5 nA
Capacitance:
8 to 10 pF
Responsivity/Photosensitivity:
0.80 to 0.85 A/W
Package Type:
Ceramic, Surface Mount
Configuration:
Array
Channels:
Multiple
Module:
No
more info
Description: High Speed GaAs Arrays
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
650 to 860 nm
Operation Mode:
Photovoltaic
Dark Current:
0.03 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.63 A/W
Package Type:
Ceramic, Submount
Configuration:
Array
Module:
No
more info
Description: Photoconductive Devices
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Dark Current:
1 to 15 nA
Capacitance:
130 to 700 pF
Responsivity/Photosensitivity:
0.60 to 0.65 A/W
Package Type:
Through-Hole
Channels:
Single
more info
Description: Planar Diffused Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
980 nm
Capacitance:
150 pF
Responsivity/Photosensitivity:
0.33 A/W
Package Type:
Through-Hole
Channels:
Single
more info
Description: Back Illuminated InGaAs Photodiode / Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Dark Current:
0.05 to 5 nA
Capacitance:
8 to 10 pF
Responsivity/Photosensitivity:
0.8 to 0.85 A/W
Configuration:
Array
Channels:
Single
more info
Description: Photoconductive Devices
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Dark Current:
5 to 10 nA
Capacitance:
8 to 50 pF
Responsivity/Photosensitivity:
0.47 to 0.54 A/W
Package Type:
Through-Hole
Channels:
Single
more info
Description: Nd-YAG Optimized Photodiodes
Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Dark Current:
30 to 200 nA
Capacitance:
15 pF
Responsivity/Photosensitivity:
0.40 A/W
Channels:
Quad
more info
Description: Blue Enhanced Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
436nm
Dark Current:
25 nA
Capacitance:
1800 pF
Responsivity/Photosensitivity:
0.18 to 0.21 A/W
Package Type:
Through-Hole
Channels:
Single
more info
1 - 15 of 273 Photodiodes

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