Photodiodes - OSI Optoelectronics

243 Photodiodes from OSI Optoelectronics meet your specification.

Photodiodes from OSI Optoelectronics are listed on GoPhotonics. We have compiled a list of Photodiodes from the OSI Optoelectronics website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to OSI Optoelectronics and their distributors in your region.

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  • Manufacturer : OSI Optoelectronics
Description: Silicon/InGaAs PIN photodiode from 400 to 1800 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1100 nm (Silicon)/1000 to 1800 nm (InGaAs)
Operation Mode:
Photoconductive
Capacitance:
450 pF (Silicon)/300 pF (InGaAs)
Responsivity/Photosensitivity:
0.55 A/W (Silicon)/0.6 A/W (InGaAs)
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
Module:
No
more info
Description: Silicon-InGaAs Dual Sandwich Photodiode for Metal Processing Applications
Photodetector Type:
PIN
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1100 nm (Silicon)/1000 to 1800 nm (InGaAs)
Operation Mode:
Photoconductive
Capacitance:
450 pF (Silicon)/300 pF (InGaAs)
Responsivity/Photosensitivity:
0.55 A/W (Silicon)/0.6 A/W (InGaAs)
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
Module:
No
more info
Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.75 to 0.9 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
Module:
No
more info
Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.75 to 0.9 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
Module:
No
more info
Description: 400 nm to 1100 nm / 950 nm - 1100 nm, Dual Sandwich Photodiode for Sensing Applications
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm (Silicon)/950 to 1100 nm (Silicon)
Operation Mode:
Photoconductive
Capacitance:
70 pF
Responsivity/Photosensitivity:
0.45 A/W (Silicon)/0.12 A/W (Silicon)
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: 900 to 1700 nm Back-Illuminated InGaAs Photodiode/Arrays
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 5 nA
Capacitance:
8 to 10 pF
Responsivity/Photosensitivity:
0.80 to 0.85 A/W
Package Type:
Ceramic, Surface Mount
Configuration:
Array
Channels:
Multiple
Module:
No
more info
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
3 to 7 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
more info
Description: High Speed InGaAs Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
Ceramic, submount
Configuration:
Array
Channels:
Multiple
Module:
No
more info
Description: Large Active Area InGaAs Quadrants
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 100 nA
Capacitance:
225 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 5000 nA
Capacitance:
8 to 375 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single)
Module:
No
more info
Description: High Speed InGaAs Photodiodes Mounted on Cavity Ceramic Packages
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 20 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single)
Module:
No
more info
Description: High Speed Silicon Photodiodes with 100Mbps to 622Mbps Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 0.8 nA
Capacitance:
0.8 pF
Responsivity/Photosensitivity:
0.45 to 0.50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Soft X-Ray, Far UV Enhanced Photodiodes
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
0.3 to 0.5 nF
Package Type:
TO-Can
Channels:
Single
Module:
No
more info
1 - 15 of 243 Photodiodes

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