Photodiodes - OSI Optoelectronics

3 Photodiodes from OSI Optoelectronics meet your specification.
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Manufacturer : OSI Optoelectronics  reset
Description: High Speed GaAs Arrays
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
650 to 860 nm
Operation Mode:
Photovoltaic
Dark Current:
0.03 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.63 A/W
Package Type:
Ceramic, Submount
Configuration:
Array
Module:
No
more info
Description: Large Active Area InGaAs Quadrants
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.5 to 100 nA
Capacitance:
25 to 225 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Through-Hole, TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
more info
Description: High Speed InGaAs Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
Ceramic, Submount
Configuration:
Array
Channels:
Multiple
Module:
No
more info