Photodiodes - LED Microsensor NT

17 Photodiodes from LED Microsensor NT meet your specification.
Selected Filters Reset All
  • Manufacturer : LED Microsensor NT
Request Quote
Description: Mid-Infrared (MIR) Photodiode
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
3.55 to 4.15 µm
Operation Mode:
Photovoltaic
Dark Current:
4000 to 5000 µA
Responsivity/Photosensitivity:
1.0 to 1.1 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Request Quote
Description: Mid-Infrared (MIR) Photodiode
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
2.4 to 3.1 µm
Operation Mode:
Photovoltaic
Dark Current:
50 to 600 µ?
Capacitance:
150 to 350 pF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Request Quote
Description: Mid-Infrared (MIR) Photodiode
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
3.8 to 4.2 µm
Operation Mode:
Photovoltaic
Dark Current:
1 to 6 µ?
Capacitance:
1300 to 2600 pF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Request Quote
Description: Mid-Infrared (MIR) Photodiode
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
3.5 to 4.2 µm
Operation Mode:
Photovoltaic
Dark Current:
8 to 25 µ?
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Request Quote
Description: Mid-Infrared (MIR) Photodiode
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
3.5 to 4.2 µm
Operation Mode:
Photovoltaic
Dark Current:
15000 to 25000 µA
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Request Quote
Description: Mid-Infrared (MIR) Photodiode
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
2.2 to 3.4 µm
Operation Mode:
Photovoltaic
Dark Current:
120 to 1000 µA
Capacitance:
600 to 1100 pF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Request Quote
Description: Mid-Infrared (MIR) Photodiode
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
2.2 to 3.4 µm
Operation Mode:
Photovoltaic
Dark Current:
300 to 1000 µA
Capacitance:
800 to 1100 pF
Responsivity/Photosensitivity:
1.0 to 1.2 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Request Quote
Description: Mid-Infrared (MIR) Photodiode
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
3.6 to 4.0 µm
Operation Mode:
Photovoltaic
Dark Current:
6500 to 8000 µA
Responsivity/Photosensitivity:
1.1 to 1.2 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Request Quote
Description: Near-Infrared (NIR) Photodiode
Photodiode Material:
GaInAsSb
Wavelength Range:
1.85 to 2.30 µm
Operation Mode:
Photovoltaic
Dark Current:
30 to 60 µA
Capacitance:
160 to 200 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Request Quote
Description: Mid-Infrared (MIR) Photodiode
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
3.5 to 4.0 µm
Operation Mode:
Photovoltaic
Dark Current:
5000 to 6000 µA
Responsivity/Photosensitivity:
0.7 to 0.8 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
1 - 10 of 17 Photodiodes
Have a Custom Requirement?

Filters

Manufacturers from 

Photodetector Type 

Photodiode Material 

Package Type 

Operation Mode 

Wavelength Range (nm)  

Apply

Capacitance (pF)  

Apply

Responsivity/Photosensitivity (A/W)  

Apply

Dark Current (nA)  

Apply

Channels 

Configuration 

Module 

Tags 

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.