Photodiodes - LED Microsensor NT

17 Photodiodes from LED Microsensor NT meet your specification.
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Description:Mid-Infrared (MIR) Photodiode
Photodetector Type:
Photovoltaic
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
3.8 to 4.2 µm
Dark Current:
4000 to 6000 µA
Capacitance:
1300 to 2600 pF
Responsivity/Photosensitivity:
1.6 to 2.0 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Description:Mid-Infrared (MIR) Photodiode
Photodetector Type:
Photovoltaic
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
2.4 to 3.1 µm
Dark Current:
50 to 600 µ?
Capacitance:
150 to 350 pF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Description:Mid-Infrared (MIR) Photodiode
Photodetector Type:
Photovoltaic
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
2.4 to 3.1 µm
Dark Current:
80 to 300 µA
Capacitance:
250 to 300 pF
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Description:Mid-Infrared (MIR) Photodiode
Photodetector Type:
Photovoltaic
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
3.8 to 4.2 µm
Dark Current:
4000 to 6000 µA
Capacitance:
-
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Description:Mid-Infrared (MIR) Photodiode
Photodetector Type:
Photovoltaic
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
3.5 to 4.2 µm
Dark Current:
8 to 25 µ?
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Description:Mid-Infrared (MIR) Photodiode
Photodetector Type:
Photovoltaic
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
2.45 to 3.3 µm
Dark Current:
150 to 600 µA
Capacitance:
200 to 300 pF
Responsivity/Photosensitivity:
0.7 to 0.8 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Description:Near-Infrared (NIR) Photodiode
Photodetector Type:
Photovoltaic
Photodiode Material:
GaInAsSb
Wavelength Range:
1.85 to 2.30 µm
Dark Current:
30 to 60 µA
Capacitance:
160 to 200 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Description:Mid-Infrared (MIR) Photodiode
Photodetector Type:
Photovoltaic
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
3.5 to 4.0 µm
Dark Current:
5000 to 6000 µA
Responsivity/Photosensitivity:
0.7 to 0.8 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Description:Mid-Infrared (MIR) Photodiode
Photodetector Type:
Photovoltaic
Photodiode Material:
InAsSbP, InAs
Wavelength Range:
3.5 to 4.2 µm
Dark Current:
15000 to 25000 µA
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info
Description:Near-Infrared (NIR) Photodiode
Photodetector Type:
Photovoltaic
Photodiode Material:
InGaAs
Wavelength Range:
1.65 to 2.35 µm
Dark Current:
4 to 7 µA
Capacitance:
200 to 250 pF
Responsivity/Photosensitivity:
1.0 to 1.3 A/W
Package Type:
Through-Hole
Configuration:
Single
Channels:
Single
Module:
Yes
more info