Photodiodes - Lasermate Group

97 Photodiodes from Lasermate Group meet your specification.

Photodiodes from Lasermate Group are listed on GoPhotonics. We have compiled a list of Photodiodes from the Lasermate Group website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Lasermate Group and their distributors in your region.

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  • Manufacturer : Lasermate Group
Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 20 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
0.8 to 9 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 1 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Silicon PIN photodiode from 200 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
200 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 20 pA
Capacitance:
4.5 to 33 pF
Responsivity/Photosensitivity:
0.08 to 0.44 mA/mW
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: GaAs PIN photodiode from 770 to 860 nm
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
770 to 860 nm
Operation Mode:
Photovoltaic
Package Type:
Connectorized
Module:
No
more info
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.56 to 0.7 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1.2 nA
Capacitance:
1.5 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs PIN photodiode from 1260 to 1620 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1620 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 50 pA
Capacitance:
1.5 to 15 pF
Responsivity/Photosensitivity:
0.1 to 0.45 mA/mW
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 1 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
more info
Description: GaAs PIN photodiode from 770 to 860 nm
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
770 to 860 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 1260 to 1620 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1260 to 1620 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.56 to 0.7 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
Package Type:
TO-Can
Module:
No
more info
Description: InGaAs PIN photodiode from 1310 to 1550 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1310 to 1550 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Capacitance:
1000 to 1300 pF
Responsivity/Photosensitivity:
0.8 to 1 A/W
Package Type:
Chip, Die
Module:
No
more info
Description: 940 nm Silicon PIN photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
940 nm
Operation Mode:
Photoconductive
Dark Current:
5 nA
Capacitance:
1.1 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: 1550 nm InGaAs PIN photodiode
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1550 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.7 to 0.9 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
Package Type:
Chip, Die
Module:
No
more info
1 - 15 of 97 Photodiodes

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