Photodiodes

91 Photodiodes from 3 Manufacturers meet your specification.
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  • Manufacturer : Philips Photonics, Vishay Intertechnology, Bentham Instruments
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
1 to 0.2 nA
Capacitance:
120 to 160 pF
Responsivity/Photosensitivity:
0.5 to 0.7 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
950 nm
Dark Current:
2 to 30 nA
Capacitance:
25 to 70 pF
Package Type:
Surface Mount
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Description: The DH_MCT12 cryogenically cooled mercury cadmium telluride takes high responsivity into the LWIR.
Photodetector Type:
PN
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
2000 to 12000 nm
Operation Mode:
Photoconductive
Package Type:
Module with Connector
Configuration:
Single
Channels:
Single
Module:
Yes
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Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
0.02 to 0.2 nA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Description: The DH_IGA indium gallium arsenide photodiode offers optimal performance up to 1700nm
Photodetector Type:
PN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 nA
Responsivity/Photosensitivity:
1.07 A/W
Package Type:
Module with Connector
Configuration:
Single
Channels:
Single
Module:
Yes
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Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
840 to 860 nm
Dark Current:
0.02 to 0.2 nA
Capacitance:
290 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
Chip
Configuration:
Single
Channels:
Single
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Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
950 nm
Dark Current:
2 to 30 nA
Capacitance:
48 pF
Responsivity/Photosensitivity:
0.6 to 0.35 A/W
Package Type:
Leaded
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Description: The DH_IGA-EX_TE indium gallium arsenide photodiode extends the high responsivity and excellent performance of the DH_IGA InGaAs further into the infrared to 2500nm
Photodetector Type:
PN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.001 nA
Responsivity/Photosensitivity:
1.07 A/W
Package Type:
Module with Connector
Configuration:
Single
Channels:
Single
Module:
Yes
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Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
560 nm
Dark Current:
2 to 5 nA
Capacitance:
730 pF
Package Type:
Chip
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Description: The DH_PBSE_TE cooled lead selenide photodiode offers wide spectral responsivity to 5µm and the convenience of thermo-electric cooling.
Photodetector Type:
PN
Photodiode Material:
PbSe
Wavelength Range:
1000 to 5000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
2 x 104 V.W-1
Package Type:
Module with Connector
Configuration:
Single
Channels:
Single
Module:
Yes
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1 - 10 of 91 Photodiodes
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