Photodiodes

273 Photodiodes from 15 Manufacturers meet your specification.
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  • Package Type : Ceramic
  • Wavelength Range : 320 to 1100 nm
Description: 0.9 µm to 1.7 µm, InGaAs PIN Photodiode for Humidity & Gas Leak Detection Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
25 to 50 nA
Capacitance:
1800 to 2200 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
Ceramic, Chip
Configuration:
Single
Module:
No
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Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.75 to 0.9 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
Module:
No
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Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.75 to 0.9 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
Module:
No
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Description: Silicon Avalanche Photodiode from 400 to 700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 700 nm
Operation Mode:
Photovoltaic
Dark Current:
2 nA
Capacitance:
60 pF
Responsivity/Photosensitivity:
52 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
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Photodiode Material:
Germanium (Ge)
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
50 µA
Capacitance:
50 to 135 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
Module:
No
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Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
0.8 to 9 A/W
Package Type:
Ceramic, Chip
Configuration:
Single
Module:
No
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Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
Module:
No
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Description: 1040 nm PD series photodiode with Chip, PCB, Ceramic Package
Photodiode Material:
Silicon
Wavelength Range:
1040 nm
Operation Mode:
Photoconductive
Dark Current:
1500 pA
Capacitance:
340 pF
Responsivity/Photosensitivity:
0.2 to 0.81 A/W
Package Type:
Chip, PCB, Ceramic
Module:
No
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Description: 900 to 1700 nm Back-Illuminated InGaAs Photodiode/Arrays
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 5 nA
Capacitance:
8 to 10 pF
Responsivity/Photosensitivity:
0.80 to 0.85 A/W
Package Type:
Ceramic, Surface Mount
Configuration:
Array
Channels:
Multiple
Module:
No
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Description: InGaAs PIN Photodiode Chip on Ceramic, Active Area 1000um
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
5 to 6 pF
Responsivity/Photosensitivity:
0.88 to 0.98 A/W
Package Type:
Chip on Ceramic
Module:
No
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Description: 1010 nm PD series photodiode with Chip, PCB, Ceramic Package
Photodiode Material:
Silicon
Wavelength Range:
1010 nm
Operation Mode:
Photoconductive
Dark Current:
60 pA
Capacitance:
1200 pF
Responsivity/Photosensitivity:
0.2 to 0.8 A/W
Package Type:
Chip, PCB, Ceramic
Module:
No
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Description: High Speed InGaAs Photodiodes Mounted on Wedge Ceramic Packages
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 5 nA
Capacitance:
14 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
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Description: 1040 nm PD series photodiode with Chip, PCB, Ceramic Package
Photodiode Material:
Silicon
Wavelength Range:
1040 nm
Operation Mode:
Photoconductive
Dark Current:
1500 pA
Capacitance:
340 pF
Responsivity/Photosensitivity:
0.2 to 0.81 A/W
Package Type:
Chip, PCB, Ceramic
Module:
No
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Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
3 to 7 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
Ceramic, DIP
Configuration:
Single
Channels:
Single)
Module:
No
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Photodiode Material:
Silicon
Wavelength Range:
925 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
80 to 100 pF
Package Type:
Through-Hole, Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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