Photodiodes

3 Photodiodes from ANDANTA meet your specification.
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  • Package Type : Ceramic
  • Wavelength Range : 320 to 1100 nm
  • Manufacturer : ANDANTA
Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
0.8 to 9 A/W
Package Type:
Ceramic, Chip
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
Configuration:
Single
Module:
No
more info
1 - 3 of 3 Photodiodes

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