Photodiodes

306 Photodiodes from 19 Manufacturers meet your specification.
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  • Package Type : Chip, PCB, Ceramic
  • Wavelength Range : 1010 to 1010 nm
Photodiode Material:
Germanium (Ge)
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
50 µA
Capacitance:
50 to 135 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: Silicon PIN photodiode from 950 to 1680 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
950 to 1680 nm
Operation Mode:
Photoconductive
Dark Current:
5 nA
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.8 A/W
Package Type:
Chip
Module:
No
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Description: Silicon Photodiode Array Chip from 600 to 1050 nm
Photodetector Type:
PN
Photodiode Material:
Silicon
Wavelength Range:
600 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
0.35 nA to 5 µA
Capacitance:
20 to 30 pF
Responsivity/Photosensitivity:
0.5 to 0.65 A/W
Package Type:
Chip
Configuration:
Array
Module:
No
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Description: HgCdTe Avalanche Photodiode Array from 0.8 to 2.5 µm
Photodetector Type:
Avalanche
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
0.8 to 2.5 µm
Operation Mode:
Photovoltaic
Package Type:
Chip, Surface Mount
Configuration:
Array
Channels:
Single
Module:
No
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Description: 0.9 µm to 1.7 µm, InGaAs PIN Photodiode for Humidity & Gas Leak Detection Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
25 to 50 nA
Capacitance:
1800 to 2200 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
Ceramic, Chip
Configuration:
Single
Module:
No
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Description: 900 to 1700 nm KP-E Edge Illuminated InGaAs Photodiodes with Chip package
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 300 pA
Capacitance:
2 to 5 pF
Responsivity/Photosensitivity:
0.5 to 0.75 A/W
Package Type:
Chip
Module:
No
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Description: Silicon PIN photodiode from 640 to 1060 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
640 to 1060 nm
Operation Mode:
Photoconductive
Dark Current:
<1 to 3 nA
Capacitance:
12 pF
Package Type:
Chip
Module:
No
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Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
Module:
No
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Description: InGaAs PIN Photodiode Chip on Ceramic, Active Area 500um
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
1.5 to 3 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.88 to 0.95 A/W
Package Type:
Chip on Ceramic
Module:
No
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Description: Silicon PIN photodiode from 300 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
300 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
30 nA
Package Type:
Chip
Module:
No
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Description: InGaAs PIN Photodiode Chip on Ceramic, Active Area 300um
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
5 to 6 pF
Responsivity/Photosensitivity:
0.88 to 0.98 A/W
Package Type:
Chip on Ceramic
Module:
No
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Description: Silicon PIN Photodiode Array
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 860 pA
Capacitance:
8.2 to 33 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
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Description: Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 pA
Capacitance:
1 nF
Responsivity/Photosensitivity:
0.10 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
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Description: Silicon PIN photodiode from 430 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
430 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 nA
Capacitance:
2.2 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
Chip
Module:
No
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Description: InGaAs Ceramic, TO-Can Pigtail photodiode from 900 to 1700 nm
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
Ceramic, TO-Can Pigtail
Configuration:
Single
Module:
No
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Description: Silicon photodiode from 400 to 1150 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
50 nA
Capacitance:
500 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
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1 - 15 of 306 Photodiodes

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