Photodiodes
819 Photodiodes from 29 Manufacturers meet your specification.
Selected Filters Reset All Wavelength Range : 320 to 1000 nm
Description: 0.6 µm to 1.7 µm, InGaAs PIN Photodiodes for Optical Powering Applications
Description: 440 to 1100 nm VIS-NIR TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Responsivity/Photosensitivity:
0.52 A/W
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Description: TO-Can Silicon photodiode from 450 to 1050 nm
Description: 400 ns Rise Time, 320 - 1100 nm, 1.1 mm x 1.1 mm Active Area Si Photodiode
Description: 400 nm to 1700 nm, InGaAs Position Sensitive Detector for Alignment & Sensing Applications
Photodiode Material:
InGaAs
Wavelength Range:
400 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 200 nA
Capacitance:
150 to 300 pF
Responsivity/Photosensitivity:
0.29 to 0.98 A/W
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: Silicon/InGaAs PIN photodiode from 400 to 1800 nm
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1100 nm (Silicon)/1000 to 1800 nm (InGaAs)
Operation Mode:
Photoconductive
Capacitance:
450 pF (Silicon)/300 pF (InGaAs)
Responsivity/Photosensitivity:
0.55 A/W (Silicon)/0.6 A/W (InGaAs)
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Description: High Speed InGaAs PIN Photodiode
Description: This PIN-photodiode consists of a large chip with 1.6x1.6mm active area mounted on the TO-18 stem and is sealed with epoxy resin
Description: 4 x 0.25 mm2 Circular Active Area Quadrant PIN photodiode with TO-Can package
Description: Si photodetector (TO package)
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
0.8 to 70 pF
Responsivity/Photosensitivity:
0.4 to 0.55 A/W
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Description: 0.1 mm² active area UV-detector Silicon carbide photodiode
Photodiode Material:
Silicon Carbide (SiC)
Wavelength Range:
210 to 355 nm
Operation Mode:
Photoconductive
Capacitance:
13 to 20 pF (Junction)
Responsivity/Photosensitivity:
0.18 to 0.16 A/W
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Description: 0.9 µm to 2.2 µm, InGaAs PIN Photodiodes for Power Monitoring Applications
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 20 nA
Capacitance:
1400 to 2300 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
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1 - 15 of 819 Photodiodes
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