Photodiodes

802 Photodiodes from 30 Manufacturers meet your specification.
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  • Package Type : TO-Can
  • Wavelength Range : 400 to 1100 nm
Description: 400 ns Rise Time, 320 - 1100 nm, 1.1 mm x 1.1 mm Active Area Si Photodiode
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
2 pA
Capacitance:
140 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 320 to 1000 nm UV-VIS-NIR TO-8 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 15 nA
Capacitance:
22 pF
Responsivity/Photosensitivity:
0.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
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Description: Silicon Photodiode, RoHS Compliant
Photodetector Type:
PN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA (Reverse)
Capacitance:
1.2 to 400 pF
Package Type:
TO-Can, Leaded
Module:
No
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Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: InGaAs, PIN Photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 0.6 nA
Capacitance:
35 to 50 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 1064 nm TO-Can photodiode
Wavelength Range:
1064 nm
Operation Mode:
Photovoltaic
Dark Current:
10 nA
Responsivity/Photosensitivity:
21 mA/W
Package Type:
TO-Can
Module:
No
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Description: 400 nm to 1700 nm, InGaAs Position Sensitive Detector for Alignment & Sensing Applications
Photodiode Material:
InGaAs
Wavelength Range:
400 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 200 nA
Capacitance:
150 to 300 pF
Responsivity/Photosensitivity:
0.29 to 0.98 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: InGaAs PIN photodiode from 0.9 to 2.2 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
2.5 to 5 µA
Capacitance:
300 to 600 pF
Responsivity/Photosensitivity:
0.95 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: High Speed InGaAs PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
265 uA
Capacitance:
2090 pF
Responsivity/Photosensitivity:
0.50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: InGaAs PIN Photodiodes, TO-46, Lens Cap, Active Area 1500um
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 1010 nm PD series photodiode with TO-46 Package
Photodiode Material:
Silicon
Wavelength Range:
1010 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA to 15 pA
Capacitance:
13 to 65 pF
Responsivity/Photosensitivity:
0.11 to 0.73 A/W (Schott UV-glass), 0.2 to 0.8 (No...
Package Type:
TO-Can
Module:
No
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Description: 13 mm2 Active Area PIN photodiode with TO-Can package
Photodetector Type:
PIN
Wavelength Range:
410 nm / 550 nm
Operation Mode:
Photoconductive
Dark Current:
0.25 to 10 nA
Capacitance:
50 to 180 pF
Responsivity/Photosensitivity:
0.22 to 0.37 A/W
Package Type:
TO-Can
Module:
No
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Description: InGaAs Detector, 120µm Dia, TO-46
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: 400 to 1000 nm Visible TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Capacitance:
6 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
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Description: 0.9 µm - 1.7 µm, InGaAs PIN Photodiode for Optical Powering Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
1 to 2 nA
Capacitance:
120 to 160 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: Silicon Photodiode
Photodetector Type:
PN
Photodiode Material:
Silicon
Wavelength Range:
420 to 675 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 30 nA (Reverse)
Capacitance:
1.2 to 400 pF
Package Type:
TO-Can, Leaded
Module:
No
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1 - 15 of 802 Photodiodes

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