Photodiodes

16 Photodiodes from Thorlabs Inc meet your specification.
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  • Package Type : TO-Can
  • Wavelength Range : 400 to 1100 nm
  • Manufacturer : Thorlabs Inc
Description: 400 ns Rise Time, 320 - 1100 nm, 1.1 mm x 1.1 mm Active Area Si Photodiode
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
2 pA
Capacitance:
140 pF
Responsivity/Photosensitivity:
0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Dual Band Si/InGaAs Detector, 4 µs Rise Time, 400 - 1700 nm, Ø2.54/Ø1.5 mm
Photodetector Type:
PIN
Photodiode Material:
InGaAs, Silicon
Wavelength Range:
400 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
1 nA
Capacitance:
450 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Dual
Module:
No
more info
Description: Ge Photodiode, 500 ns Rise Time, 800 - 1800 nm, Ø3 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
1.0 µA
Capacitance:
3250 pF
Responsivity/Photosensitivity:
0.88 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Calibrated Ge Photodiode, 800 - 1800 nm, Ø3.0 mm Active Area
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
1 to 4 uA
Capacitance:
3250 to 4000 pF
Responsivity/Photosensitivity:
0.88 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs Photodiode, 10 ns Rise Time, 900-1700 nm, Ø1 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
1.1 nA
Capacitance:
80 pF
Responsivity/Photosensitivity:
1.05 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø0.12 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 nA
Capacitance:
2 pF
Responsivity/Photosensitivity:
1.003 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs Photodiode, 17 ns Rise Time, 800-2600 nm, Ø0.5 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photovoltaic
Dark Current:
1 µA
Capacitance:
140 pF
Responsivity/Photosensitivity:
1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Ge Photodiode, 220 ns Rise Time, 800 - 1800 nm, Ø5 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
60 µA
Capacitance:
1800 pF
Responsivity/Photosensitivity:
0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs Photodiode, 25 ns Rise Time, 800-2600 nm, Ø1.0 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photovoltaic
Dark Current:
3 µA
Capacitance:
500 pF
Responsivity/Photosensitivity:
1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Calibrated Si Photodiode, 350 - 1100 nm, 3.6 x 3.6 mm Active Area
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
1.0 nA
Capacitance:
24 pF
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Calibrated InGaAs Photodiode, 800 - 1700 nm, Ø2.0 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
50 nA
Capacitance:
100 pF
Responsivity/Photosensitivity:
1.04 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs Photodiode, 14 ns Rise Time, 800-1700 nm, Ø2 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
50 nA
Capacitance:
100 pF
Responsivity/Photosensitivity:
1.04 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Si Photodiode, 47 ps Rise Time, 400 - 1100 nm, Ø0.25 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
35 pA
Capacitance:
0.94 pF
Responsivity/Photosensitivity:
0.48 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: Si Photodiode, 10 ns Rise Time, 350 - 1100 nm, 3.6 mm x 3.6 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
1.0 nA
Capacitance:
24 pF
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
Description: InGaAs Photodiode, 2.5 ns Rise Time, 800-1700 nm, Ø0.5 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
6 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
more info
1 - 15 of 16 Photodiodes

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