Photodiodes
876 Photodiodes from 35 Manufacturers meet your specification.
Selected Filters Reset All Wavelength Range : 900 to 2700 nm
Description: 440 to 1100 nm VIS-NIR TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Responsivity/Photosensitivity:
0.52 A/W
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Description: 0.6 µm to 1.7 µm, InGaAs PIN Photodiodes for Optical Powering Applications
Description: TO-Can Silicon photodiode from 450 to 1050 nm
Description: InGaAs Avalanche TO-Can photodiode
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1550 nm
Operation Mode:
Photoconductive
Capacitance:
0.5 to 0.7 pF
Responsivity/Photosensitivity:
0.9 to 9 A/W
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Description: 1064 nm TO-Can photodiode
Description: 400 nm to 1700 nm, InGaAs Position Sensitive Detector for Alignment & Sensing Applications
Photodiode Material:
InGaAs
Wavelength Range:
400 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 200 nA
Capacitance:
150 to 300 pF
Responsivity/Photosensitivity:
0.29 to 0.98 A/W
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Description: Silicon/InGaAs PIN photodiode from 400 to 1800 nm
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1100 nm (Silicon)/1000 to 1800 nm (InGaAs)
Operation Mode:
Photoconductive
Capacitance:
450 pF (Silicon)/300 pF (InGaAs)
Responsivity/Photosensitivity:
0.55 A/W (Silicon)/0.6 A/W (InGaAs)
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Description: High Speed InGaAs PIN Photodiode
Description: Thermoelectrically Cooled Extended InGaAs Photodiodes
Description: This PIN-photodiode consists of a large chip with 1.6x1.6mm active area mounted on the TO-18 stem and is sealed with epoxy resin
Description: InGaAs, PIN Photodiode from 1250 to 1650 nm
Description: 4 x 0.25 mm2 Circular Active Area Quadrant PIN photodiode with TO-Can package
1 - 15 of 876 Photodiodes
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