Photodiodes

296 Photodiodes from 11 Manufacturers meet your specification.
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  • Channels : Single
  • Package Type : TO-Can
  • Wavelength Range : 400 to 1100 nm
Description: Ge Photodiode, 500 ns Rise Time, 800 - 1800 nm, Ø3 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
1.0 µA
Capacitance:
3250 pF
Responsivity/Photosensitivity:
0.88 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: 320 to 1000 nm UV-VIS-NIR TO-8 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 15 nA
Capacitance:
22 pF
Responsivity/Photosensitivity:
0.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
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Description: High Speed InGaAs PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
265 uA
Capacitance:
2090 pF
Responsivity/Photosensitivity:
0.50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: InGaAs Detector, 120µm Dia, TO-46
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: 400 to 1000 nm Visible TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Capacitance:
6 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
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Photodetector Type:
PIN
Photodiode Material:
Silicon, GaAs, GaAlAs
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 60 nA
Capacitance:
4 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: High Speed InGaAs PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
160 uA
Capacitance:
1260 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: SILICON QUADRANT PHOTODIODE
Photodetector Type:
PN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 36 nA
Capacitance:
40 to 90 pF
Responsivity/Photosensitivity:
0.40 to 0.57 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: 440 to 1100 nm Near-Infrared TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.4 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
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Description: UV Enhanced Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
30 to 480 pA
Capacitance:
23 to 100 pF
Responsivity/Photosensitivity:
0.39 to 0.51 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: Normal Response 5.1mm2, Silicon Detector
Photodiode Material:
Silicon
Wavelength Range:
970 nm
Operation Mode:
Photoconductive
Dark Current:
0.25 nA
Capacitance:
85 pF
Responsivity/Photosensitivity:
0.65 A/W
Package Type:
TO-Can, Leaded
Configuration:
Single
Channels:
Single
Module:
No
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Description: 0.95 to 1.7 µm Near-Infrared TO-18 InGaAs Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.95 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
20 to 50 nA
Capacitance:
2 pF
Responsivity/Photosensitivity:
0.65 to 0.8 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
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Description: This PIN-photodiode consists of a large chip with 1.6x1.6mm active area mounted on the TO-18 stem and is hermetical sealed by metal can with ball lens
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
18 pF
Package Type:
Chip, TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: Blue Enhanced Response, 0.81mm2, Silicon Detector
Photodiode Material:
Silicon
Wavelength Range:
410 nm
Operation Mode:
Photovoltaic
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.2 A/W
Package Type:
TO-Can, Leaded
Configuration:
Single
Channels:
Single
Module:
No
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Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
25 nA
Capacitance:
150 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: This PIN-photodiode consists of a large chip with 1.6x1.6mm active area mounted on the TO-18 (3pins) stem and is hermetical sealed by metal can with ball lens
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
18 pF
Package Type:
Chip, TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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