Photodiodes - Hamamatsu Photonics - Page 10

376 Photodiodes from Hamamatsu Photonics meet your specification.
Selected Filters Reset All
  • Manufacturer : Hamamatsu Photonics
Description: TO-Can Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photovoltaic
Capacitance:
5 pF
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
30 pA
Capacitance:
230 pF
Responsivity/Photosensitivity:
0.38 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.67 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.67 µm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.1 nA
Capacitance:
75 to 140 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1000 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 0.5 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
0.44 to 0.57 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: DIP, Ceramic Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
60 to 300 pA
Capacitance:
20 to 35 pF
Responsivity/Photosensitivity:
0.08 to 0.50 A/W
Package Type:
DIP, Ceramic
Configuration:
Array
Channels:
Multiple (35 Channels))
Module:
No
more info
Description: Surface Mount Silicon photodiode from 400 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 300 pA
Capacitance:
40 to 90 pF
Responsivity/Photosensitivity:
380 to 610 mA/W
Package Type:
Surface Mount
Configuration:
Array
Channels:
Multiple (64 Channels))
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 2.57 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.57 µm
Operation Mode:
Photovoltaic
Dark Current:
0.12 to 1.2 µA
Capacitance:
44 to 100 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 340 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 10 nA
Capacitance:
40 pF
Responsivity/Photosensitivity:
0.22 to 0.66 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 pA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.3 to 0.35 A/W
Package Type:
Ceramic
Module:
No
more info
Description: DIP, Ceramic Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 50 pA
Capacitance:
120 to 550 pF
Responsivity/Photosensitivity:
0.08 to 0.58 A/W
Package Type:
DIP, Ceramic
Configuration:
Array
Channels:
Multiple (46 Channels))
Module:
No
more info
Description: InGaAs PIN photodiode from 0.5 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.5 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 2.5 nA
Capacitance:
20 to 30 pF
Responsivity/Photosensitivity:
0.15 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode with dark current of 0.2 to 60 nA
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 60 nA
Capacitance:
200 to 1200 pF
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.65 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 0.75 nA
Capacitance:
1000 to 7000 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 4 nA
Capacitance:
55 to 120 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 5 nA
Capacitance:
40 pF
Responsivity/Photosensitivity:
0.45 to 0.72 A/W
Package Type:
Surface Mount, Ceramic, Chip
Configuration:
Single
Module:
No
more info
136 - 150 of 376 Photodiodes

Filters

Manufacturers from 

Photodetector Type 

Photodiode Material 

Package Type 

Operation Mode 

Wavelength Range (nm)  

Capacitance (pF)  

Responsivity/Photosensitivity (A/W)  

Dark Current (nA)  

Channels 

Configuration 

Tags 

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.