Photodiodes - Hamamatsu Photonics - Page 10

376 Photodiodes from Hamamatsu Photonics meet your specification.
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  • Manufacturer : Hamamatsu Photonics
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
80 pF
Responsivity/Photosensitivity:
0.45 to 0.72 A/W
Package Type:
Surface Mount, Ceramic, Chip
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.5 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.5 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
1 to 5 nA
Capacitance:
70 to 130 pF
Responsivity/Photosensitivity:
0.15 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 2.57 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.57 µm
Operation Mode:
Photovoltaic
Dark Current:
9 to 90 µA
Capacitance:
3400 to 5000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
100 pA
Capacitance:
700 pF
Responsivity/Photosensitivity:
0.38 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.08 to 5 nA
Capacitance:
14 to 30 pF
Responsivity/Photosensitivity:
0.5 to 0.6 A/W
Package Type:
DIP
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Capacitance:
16 pF
Responsivity/Photosensitivity:
0.45 to 0.7 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 340 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 10 nA
Capacitance:
40 pF
Responsivity/Photosensitivity:
0.22 to 0.66 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 340 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
20 pA
Capacitance:
950 pF
Responsivity/Photosensitivity:
0.39 to 0.43 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 320 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
10 pA
Capacitance:
500 pF
Responsivity/Photosensitivity:
0.34 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 2.55 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.55 µm
Operation Mode:
Photovoltaic
Dark Current:
0.65 to 6.5 µA
Capacitance:
400 to 1000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1060 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1060 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
7 pF
Responsivity/Photosensitivity:
0.47 to 0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 700 to 1060 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
700 to 1060 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
50 to 100 pF
Responsivity/Photosensitivity:
0.50 to 0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 5 nA
Capacitance:
4 to 20 pF
Responsivity/Photosensitivity:
0.5 to 0.55 A/W
Package Type:
Surface Mount
Channels:
Dual
Module:
No
more info
Description: TO-Can Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
5 pA
Capacitance:
730 pF
Responsivity/Photosensitivity:
0.38 to 0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
5 pF
Responsivity/Photosensitivity:
0.58 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
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  • Manufacturer : Hamamatsu Photonics

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