Photodiodes - Page 10

802 Photodiodes from 30 Manufacturers meet your specification.
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  • Package Type : TO-Can
  • Wavelength Range : 400 to 1100 nm
Description: Calibrated Si Photodiode, 350 - 1100 nm, 3.6 x 3.6 mm Active Area
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
1.0 nA
Capacitance:
24 pF
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: 500um InGaAs APD Photodiodes In TO46 Package
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
60 to 100 nA
Capacitance:
10 to 15 pF
Responsivity/Photosensitivity:
9 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 320 to 1000 nm UV-VIS-NIR TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 3 nA
Capacitance:
4 pF
Responsivity/Photosensitivity:
0.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
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Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
8 to 25 nA
Capacitance:
1.8 to 2.2 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: 0.9 µm to 2.2 µm, InGaAs PIN Photodiodes for Power Monitoring Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
10 to 20 nA
Capacitance:
1400 to 2300 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
0.8 to 9 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: InGaAs Avalanche photodiode from 700 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
700 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: This PIN-photodiode consists of a large chip with 2.0x2.0mm active area mounted on the TO-46 stem and is sealed with epoxy resin
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Capacitance:
18 pF
Package Type:
Chip, TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: SILCON QUADRANT PHOTODIODE
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 240 pA
Capacitance:
8 to 27 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: 1mm InGaAs PIN Photodiode TO5
Photodetector Type:
PIN
Photodiode Material:
InAs, InGaAs
Wavelength Range:
800 to 3600 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
250 µA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.08 to 0.2 mA/mW
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: InGaAs Detector, 120µm Dia, FC Receptable
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: InGaAs PIN photodiode from 850 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
<3 nA
Capacitance:
13 pF
Responsivity/Photosensitivity:
>0.8 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 200 to 1000 nm UV-VIS TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
200 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 15 nA
Capacitance:
30 pF
Responsivity/Photosensitivity:
0.42 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
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Description: InGaAs PIN photodiode from 800 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Capacitance:
750 to 1800 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Module:
No
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: Nd-YAG Optimized Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon, Nd:YAG
Wavelength Range:
1000 nm
Operation Mode:
Photoconductive
Dark Current:
75 to 1000 nA
Capacitance:
25 pF
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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