Photodiodes - Page 2

273 Photodiodes from 15 Manufacturers meet your specification.
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  • Package Type : Ceramic
  • Wavelength Range : 320 to 1100 nm
Description: Si Photodiode, 65 ns Rise Time, 350 - 1100 nm, 10 mm x 10 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
350 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
600 nA
Capacitance:
375 pF
Responsivity/Photosensitivity:
0.725 A/W
Package Type:
Ceramic, Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
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Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
100 to 1000 nA
Capacitance:
190 to 250 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
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Description: InP Avalanche Photodiode from 1100 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
InP
Wavelength Range:
1100 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
45 to 150 nA
Capacitance:
2.5 pF
Responsivity/Photosensitivity:
9.3 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
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Description: 1010 nm PD series photodiode with Chip, PCB, Ceramic Package
Photodiode Material:
Silicon
Wavelength Range:
1010 nm
Operation Mode:
Photoconductive
Dark Current:
60 pA
Capacitance:
1200 pF
Responsivity/Photosensitivity:
0.2 to 0.8 A/W
Package Type:
Chip, PCB, Ceramic
Module:
No
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Photodiode Material:
Germanium (Ge)
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
50 µA
Capacitance:
50 to 135 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: InGaAs PIN Photodiode Chip on Ceramic, Active Area 500um
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
1.5 to 3 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.88 to 0.95 A/W
Package Type:
Chip on Ceramic
Module:
No
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Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
200 nA (Collector)
Package Type:
Surface Mount, Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 pA
Capacitance:
1 nF
Responsivity/Photosensitivity:
0.10 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
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Description: InGaAs PIN Photodiode Chip on Ceramic, Active Area 300um
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
5 to 6 pF
Responsivity/Photosensitivity:
0.88 to 0.98 A/W
Package Type:
Chip on Ceramic
Module:
No
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Description: 320 to 1000 nm UV-VIS-NIR Ceramic Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
9 pF
Package Type:
Ceramic
Configuration:
Array
Channels:
Multiple
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Description: Silicon photodiode from 400 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
3 to 30 nA
Capacitance:
0.18 to 0.30 nF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
Configuration:
Single
Module:
No
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Description: 4x4 Photodiode Array
Photodiode Material:
Silicon
Wavelength Range:
810 nm
Operation Mode:
Photovoltaic
Capacitance:
35 pF
Responsivity/Photosensitivity:
0.35 to 0.40 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
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Description: Silicon Avalanche photodiode from 550 to 1050 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
550 to 1050 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 5 nA
Capacitance:
2 to 3 pF
Responsivity/Photosensitivity:
45 A/W
Package Type:
TO-Can, Ceramic, Surface Mount, Submount
Configuration:
Single
Module:
No
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
Configuration:
Single
Module:
No
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Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
4 to 15 nA
Capacitance:
0.35 to 0.45 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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