Photodiodes - Page 2

802 Photodiodes from 30 Manufacturers meet your specification.
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  • Package Type : TO-Can
  • Wavelength Range : 400 to 1100 nm
Description: Dual Band Si/InGaAs Detector, 4 µs Rise Time, 400 - 1700 nm, Ø2.54/Ø1.5 mm
Photodetector Type:
PIN
Photodiode Material:
InGaAs, Silicon
Wavelength Range:
400 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
1 nA
Capacitance:
450 pF
Responsivity/Photosensitivity:
0.55 to 0.60 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Dual
Module:
No
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Description: InGaAs PIN photodiode from 800 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Capacitance:
80 to 150 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
Package Type:
TO-Can
Module:
No
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Description: InGaAs Avalanche photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 20 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
0.8 to 9 A/W
Package Type:
TO-Can
Module:
No
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Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.1 to 2 nA
Capacitance:
4 to 7 pF
Responsivity/Photosensitivity:
0.9 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
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Description: 0.9 µm - 1.7 µm, InGaAs PIN Photodiode for Optical Powering Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
1 to 2 nA
Capacitance:
120 to 160 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Photodetector Type:
PIN
Photodiode Material:
Silicon, GaAs, GaAlAs
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 60 nA
Capacitance:
4 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: High speed fiber coupled photodiode
Wavelength Range:
1000 to 1650 nm
Operation Mode:
Photovoltaic
Dark Current:
5 to 10 nA
Capacitance:
0.3 to 0.4 pF
Responsivity/Photosensitivity:
0.7 to 0.85 A/W
Package Type:
TO-Can
Module:
No
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Description: High Speed InGaAs PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
600 to 1750 nm
Operation Mode:
Photoconductive
Dark Current:
160 uA
Capacitance:
1260 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: SILICON QUADRANT PHOTODIODE
Photodetector Type:
PN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 36 nA
Capacitance:
40 to 90 pF
Responsivity/Photosensitivity:
0.40 to 0.57 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: Si photodetector (TO package)
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 60 nA
Capacitance:
0.8 to 70 pF
Responsivity/Photosensitivity:
0.4 to 0.55 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 500 µm Diameter Circular Active Area Avalanche Photodiode with TO-Can package
Photodetector Type:
Avalanche
Wavelength Range:
800 nm / 905 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
2.2 pF
Responsivity/Photosensitivity:
45 to 50 A/W
Package Type:
TO-Can
Module:
No
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Description: InGaAs PIN photodiode from 850 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
<0.6 nA
Capacitance:
0.7 pF
Responsivity/Photosensitivity:
>0.85 to 0.9 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 440 to 1100 nm Near-Infrared TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.4 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
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Description: 0.9 µm to 2.2 µm, InGaAs PIN Photodiodes for LiDAR & Detection Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 2.2 µm
Operation Mode:
Photovoltaic
Dark Current:
2.5 to 5 nA
Capacitance:
300 to 600 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: InGaAs PIN photodiode from 800 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Capacitance:
2000 to 3500 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Module:
No
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Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 1 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
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