Photodiodes - Hamamatsu Photonics - Page 3

376 Photodiodes from Hamamatsu Photonics meet your specification.
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  • Manufacturer : Hamamatsu Photonics
Description: 480 to 660 nm Visible Silicon Photoconductive Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
480 to 660 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 20 pA
Capacitance:
200 pF
Responsivity/Photosensitivity:
0.38 A/W
Package Type:
DIP / DIL / Thru-Hole
Configuration:
Single
Channels:
Single
more info
Description: 320 to 1000 nm Visible TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 3 nA
Capacitance:
4 pF
Responsivity/Photosensitivity:
0.24 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 200 to 1000 nm UV-VIS TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
200 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 5 nA
Capacitance:
2 pF
Responsivity/Photosensitivity:
0.42 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 320 to 1000 nm Visible TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.6 to 6 nA
Capacitance:
11 pF
Responsivity/Photosensitivity:
0.24 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 400 to 1000 nm Visible TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
2 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 200 to 1000 nm UV-VIS TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
200 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 5 nA
Capacitance:
15 pF
Responsivity/Photosensitivity:
0.42 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 190 to 1000 nm UV-VIS-NIR Ceramic Silicon Photoconductive Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1 nA
Capacitance:
4 nF
Responsivity/Photosensitivity:
45 to 60 mA/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
more info
Description: 320 to 1100 nm VIS-NIR Silicon Photoconductive Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 pA
Capacitance:
700 pF
Responsivity/Photosensitivity:
0.33 to 0.58 A/W
Package Type:
DIP / DIL / Thru-Hole
Configuration:
Single
Channels:
Single
more info
Description: 320 to 1000 nm Visible TO-8 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 15 nA
Capacitance:
22 pF
Responsivity/Photosensitivity:
0.24 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 400 to 1000 nm VIS-NIR TO-8 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 30 nA
Capacitance:
120 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 320 to 1100 nm UV-VIS-NIR Surface Mount Silicon Photoconductive Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 5 nA
Capacitance:
40 to 60 pF
Responsivity/Photosensitivity:
0.6 to 0.72 A/W
Package Type:
Surface Mount
Configuration:
Single
Channels:
Single
more info
Description: Chip Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Operation Mode:
Photoconductive
Dark Current:
3 µA
Package Type:
Chip
Configuration:
Single
Channels:
Single
more info
Description: 400 to 1000 nm VIS-NIR TO-5 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
12 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
Description: 320 to 730 nm Visible Silicon Photoconductive Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 730 nm
Operation Mode:
Photoconductive
Dark Current:
10 pA
Capacitance:
700 pF
Responsivity/Photosensitivity:
0.19 to 0.3 A/W
Package Type:
DIP / DIL / Thru-Hole
Configuration:
Single
Channels:
Single
more info
Description: 400 to 1000 nm Visible TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
2 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
more info
31 - 45 of 376 Photodiodes

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