Photodiodes - VIGO Photonics - Page 3
132 Photodiodes from VIGO Photonics meet your specification.
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Description: 1 to 15 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
3.0 A.mm/W
more info
Description: 1 to 15 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
1.5 A.mm/W
more info
Description: 1 to 15 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.225 A.mm/W
more info
Description: 1 to 15 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.17 A.mm/W
more info
Description: 1 to 15 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.07 A.mm/W
more info
Description: 2 to 14 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
2 to 14 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.07 to 0.11 A/W
more info
Description: 1 to 15 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.03 A.mm/W
more info
Description: 1 to 15 µm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
Mercury Cadmium Telluride (HgCdTe)
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.7 A.mm/W
more info
Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Wavelength Range:
10.6 µm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.2 A.mm/W
more info
Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.09 A.mm/W
more info
Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.05 A.mm/W
more info
Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.03 A.mm/W
more info
Description: 1 to 16 µm HgCdTe four-stage thermoelectrically cooled, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.9 A.mm/W
more info
Description: 1 to 12 µm HgCdTe ambient temperature, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.5 A.mm/W
more info
Description: 1 to 12 µm HgCdTe ambient temperature, optically immersed photoconductive detector
Photodiode Material:
GaAs, Mercury Cadmium Telluride (HgCdTe)
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.2 A.mm/W
more info
31 - 45 of 132 Photodiodes
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