Photodiodes - Page 4

802 Photodiodes from 30 Manufacturers meet your specification.
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  • Package Type : TO-Can
  • Wavelength Range : 400 to 1100 nm
Description: Calibrated Ge Photodiode, 800 - 1800 nm, Ø3.0 mm Active Area
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
1 to 4 uA
Capacitance:
3250 to 4000 pF
Responsivity/Photosensitivity:
0.88 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Photodiode Material:
Silicon
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 nA
Capacitance:
50 to 130 pF
Responsivity/Photosensitivity:
0.18 to 0.38 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: InGaAs PIN Photodiodes, TO-46, Lens Cap, Active Area 1000um
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: InGaAs, Avalanche Photodiode from 0.95 to 1.65 µm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
0.95 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 50 nA
Capacitance:
2.5 to 3 pF
Responsivity/Photosensitivity:
8 to 9 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: This PIN-photodiode consists of a large chip with 1.6x1.6mm active area mounted on the TO-18 stem and is hermetical sealed by metal can with ball lens
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
18 pF
Package Type:
Chip, TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: 1mm InGaAs Quadrant PIN Detector
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
0.5 to 1 nA
Capacitance:
1.5 nF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
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Description: 0.04 mm2 Active Area Avalanche Photodiode with TO-Can package
Photodetector Type:
Avalanche
Wavelength Range:
750 to 910 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Module:
No
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Description: Blue Enhanced Response, 0.81mm2, Silicon Detector
Photodiode Material:
Silicon
Wavelength Range:
410 nm
Operation Mode:
Photovoltaic
Capacitance:
60 pF
Responsivity/Photosensitivity:
0.2 A/W
Package Type:
TO-Can, Leaded
Configuration:
Single
Channels:
Single
Module:
No
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Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.6 to 6 nA
Capacitance:
8 to 31 pF
Responsivity/Photosensitivity:
0.9 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
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Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
850 nm
Operation Mode:
Photoconductive
Dark Current:
25 nA
Capacitance:
150 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Photodiode Material:
Silicon
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 nA
Capacitance:
50 to 130 pF
Responsivity/Photosensitivity:
0.18 to 0.38 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: InGaAs PIN Photodiodes, TO-46, Lens Cap, Active Area 55um
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.3 nA
Capacitance:
0.45 to 0.65 pF
Responsivity/Photosensitivity:
0.88 to 0.95 A/W
Package Type:
TO-Can
Module:
No
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Description: Silicon, InGaAs Avalanche photodiode from 700 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
700 to 1100 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: This PIN-photodiode consists of a large chip with 1.6x1.6mm active area mounted on the TO-18 (3pins) stem and is hermetical sealed by metal can with ball lens
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
18 pF
Package Type:
Chip, TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: InGaAs QUADRANT PHOTODIODE
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
5 nA
Capacitance:
208 nF to 80 pF
Responsivity/Photosensitivity:
0.9 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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