Photodiodes - Hamamatsu Photonics - Page 5
376 Photodiodes from Hamamatsu Photonics meet your specification.
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Description: InGaAs PIN photodiode from 0.9 to 2.57 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.57 µm
Operation Mode:
Photovoltaic
Capacitance:
1500 to 3000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
more info
Description: InGaAs PIN photodiode from 0.9 to 2.57 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.57 µm
Operation Mode:
Photovoltaic
Capacitance:
3400 to 5000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
more info
Description: InGaAs PIN photodiode from 0.9 to 2.55 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.55 µm
Operation Mode:
Photovoltaic
Dark Current:
0.085 to 0.85 µA
Capacitance:
40 to 100 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
more info
Description: InGaAs PIN photodiode from 0.9 to 2.55 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.55 µm
Operation Mode:
Photovoltaic
Dark Current:
0.21 to 2.1 µA
Capacitance:
110 to 300 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
more info
Description: InGaAs PIN photodiode from 0.9 to 2.55 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.55 µm
Operation Mode:
Photovoltaic
Dark Current:
0.65 to 6.5 µA
Capacitance:
400 to 1000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
more info
Description: InGaAs PIN photodiode from 0.9 to 2.55 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.55 µm
Operation Mode:
Photovoltaic
Dark Current:
0.05 to 0.1 µA
Capacitance:
500 to 1000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
more info
Description: InGaAs PIN photodiode from 0.9 to 2.55 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.55 µm
Operation Mode:
Photovoltaic
Dark Current:
2.1 to 21 µA
Capacitance:
1400 to 3000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
more info
Description: InGaAs PIN photodiode from 0.9 to 2.55 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.55 µm
Operation Mode:
Photovoltaic
Capacitance:
3200 to 5000 pF
Responsivity/Photosensitivity:
1 to 1.3 A/W
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
500 to 2500 pA
Capacitance:
60 to 100 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Ceramic, DIP
Channels:
Multiple (16 Channels)
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
250 to 1250 pA
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Ceramic, DIP
Channels:
Multiple (32 Channels)
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
250 to 1250 pA
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Ceramic, DIP
Channels:
Multiple (46 Channels)
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 0.5 nA
Responsivity/Photosensitivity:
0.75 to 0.95 A/W
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 0.8 nA
Responsivity/Photosensitivity:
0.75 to 1 A/W
Package Type:
Surface Mount, Chip
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 4 nA
Capacitance:
55 to 120 pF
Responsivity/Photosensitivity:
0.75 to 1 A/W
Package Type:
Surface Mount, Chip
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
100 to 800 pA
Responsivity/Photosensitivity:
0.75 to 0.95 A/W
Package Type:
Surface Mount, Chip
more info
61 - 75 of 376 Photodiodes
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