Photodiodes - Page 5

273 Photodiodes from 15 Manufacturers meet your specification.
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  • Package Type : Ceramic
  • Wavelength Range : 320 to 1100 nm
Description: Si Photodiode, 150 ns Rise Time, 340 - 1100 nm, 10 mm x 10 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photovoltaic
Dark Current:
200 pA
Capacitance:
380 pF
Responsivity/Photosensitivity:
0.62 A/W
Package Type:
Ceramic, Surface Mount
Configuration:
Single
Channels:
Single
Module:
No
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Description: Selective wavelength photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
780 to 900 nm
Operation Mode:
Photoconductive
Dark Current:
21 to 30 pA
Capacitance:
21 to 69 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: Silicon Avalanche Photodiode from 400 to 700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 700 nm
Operation Mode:
Photovoltaic
Dark Current:
1.5 nA
Capacitance:
60 pF
Responsivity/Photosensitivity:
26 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
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Description: High Speed InGaAs Photodiodes Mounted on Wraparound Ceramic
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 5 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: 340 to 1100 nm UV-VIS-NIR Ceramic Silicon Photoconductive Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 6 nA
Capacitance:
40 pF
Responsivity/Photosensitivity:
0.3 to 0.66 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
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Description: Silicon PIN photodiode from 400 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.12 to 1.5 nA
Capacitance:
80 to 500 pF
Responsivity/Photosensitivity:
0.10 to 0.55 mA/mW
Package Type:
Ceramic
Configuration:
Single
Module:
No
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Description: High Speed InGaAs Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.95 A/W
Package Type:
Ceramic, Submount
Configuration:
Array
Channels:
Multiple
Module:
No
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Description: Silicon photodiode from 330 to 720 nm
Photodiode Material:
Silicon
Wavelength Range:
330 to 720 nm
Operation Mode:
Photoconductive
Dark Current:
100 pA
Capacitance:
1 nF
Responsivity/Photosensitivity:
0.29 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
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Description: Selective wavelength photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
570 to 700 nm
Operation Mode:
Photoconductive
Dark Current:
23 to 54 pA
Capacitance:
23 to 79 pF
Responsivity/Photosensitivity:
0.45 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
30 to 250 nA
Capacitance:
3.2 to 4 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: RGB COLOR SENSOR photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 700 nm
Operation Mode:
Photoconductive
Dark Current:
80 to 760 pA
Capacitance:
1310 to 1754 pF
Responsivity/Photosensitivity:
0.45 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: Selective wavelength photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
600 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 66 pA
Capacitance:
12 to 18 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: InGaAs PIN photodiode from 0.6 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.2 to 0.9 A/W
Package Type:
Ceramic, Chip
Configuration:
Single
Module:
No
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Description: UV Enchanced Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
30 to 480 pA
Capacitance:
16 to 118 pF
Responsivity/Photosensitivity:
0.14 to 0.51 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
250 pA
Capacitance:
3 nF
Responsivity/Photosensitivity:
0.10 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
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Description: Back Illuminated InGaAs Photodiode / Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 5 nA
Capacitance:
8 to 10 pF
Responsivity/Photosensitivity:
0.8 to 0.85 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
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