Photodiodes - Page 5

802 Photodiodes from 30 Manufacturers meet your specification.
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  • Package Type : TO-Can
  • Wavelength Range : 400 to 1100 nm
Description: InGaAs Photodiode, 10 ns Rise Time, 900-1700 nm, Ø1 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
1.1 nA
Capacitance:
80 pF
Responsivity/Photosensitivity:
1.05 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
160 pA
Capacitance:
1.1 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Module:
No
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Description: Si photodetector (TO package)
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 60 nA
Capacitance:
0.8 to 70 pF
Responsivity/Photosensitivity:
0.4 to 0.55 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 0.95 to 1.7 µm Near-Infrared TO-18 InGaAs Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.95 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
150 to 200 nA
Capacitance:
1.5 to 2 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
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Description: InGaAs, PIN Photodiode from 0.6 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
2 to 5 nA
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.2 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Photodiode Material:
Silicon
Wavelength Range:
250 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 10 nA
Capacitance:
6 to 20 pF
Responsivity/Photosensitivity:
0.18 to 0.38 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: InGaAs PIN Photodiodes, TO-46, Lens Cap, Active Area 75um
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 0.5 nA
Capacitance:
0.63 to 0.75 pF
Responsivity/Photosensitivity:
0.88 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: Silicon Avalanche Photodiode 905 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
905 nm
Operation Mode:
Photoconductive
Dark Current:
20 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
8.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 400 to 1000 nm Si Photodiodes with TO-Can package
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 40 pA
Capacitance:
1.2 to 1.6 pF
Responsivity/Photosensitivity:
0.35 A/W
Package Type:
TO-Can
Module:
No
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Description: 2mm Extended InGaAs Photodiodes
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 2700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
320 µA
Capacitance:
100 to 10000 pF
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 0.2 mm2 Active Area Avalanche Photodiode with TO-Can package
Photodetector Type:
Avalanche
Wavelength Range:
630 to 850 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Module:
No
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Description: InGaAs Detector, 70µm Dia, TO-46
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
0.03 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: InGaAs PIN photodiode from 850 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
<0.5 nA
Capacitance:
25 pF
Responsivity/Photosensitivity:
>0.8 to 0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 400 to 1000 nm VIS-NIR TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 0.5 nA
Capacitance:
1.5 pF
Responsivity/Photosensitivity:
0.5 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
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Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1.2 nA
Capacitance:
1.5 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
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