Photodiodes - Page 6

273 Photodiodes from 15 Manufacturers meet your specification.
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  • Package Type : Ceramic
  • Wavelength Range : 320 to 1100 nm
Description: UV Enhanced Photo diode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2.7 to 5.94 nA
Capacitance:
70 to 465 pF
Responsivity/Photosensitivity:
0.51 to 1.4 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: Selective wavelength photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
800 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 64 pA
Capacitance:
20 to 66 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: High Speed InGaAs Photodiodes Mounted on Wedge Ceramic Packages
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 2 nA
Capacitance:
0.65 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single)
Module:
No
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Description: High Speed InGaAs Photodiodes Mounted on Wedge Ceramic Packages
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
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Description: High Speed InGaAs Photodiodes Mounted on Ceramic Packages w/Leads
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single)
Module:
No
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Description: Back Illuminated InGaAs Photodiode / Arrays
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 5 nA
Capacitance:
8 to 10 pF
Responsivity/Photosensitivity:
0.8 to 0.85 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single)
Module:
No
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Description: Silicon PIN Photodiode Array
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 860 pA
Capacitance:
8.2 to 33 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
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Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
4 to 15 nA
Capacitance:
0.35 to 0.45 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: Silicon PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
100 to 1000 pA
Capacitance:
55 to 271 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: Large Active Area Silicon Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 5 nA
Capacitance:
25 to 128 pF
Responsivity/Photosensitivity:
0.37 to 0.66 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: Silicon photodiode from 400 to 1150 nm
Photodiode Material:
Silicon
Wavelength Range:
400 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
15 nA
Capacitance:
15 pF
Responsivity/Photosensitivity:
0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
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Description: 190 to 1000 nm UV-VIS-NIR Ceramic Silicon Photoconductive Photodiode
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 50 pA
Capacitance:
950 pF
Responsivity/Photosensitivity:
0.26 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
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Description: InGaAs Avalanche photodiode from 1000 to 1630 nm
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1000 to 1630 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 15 nA
Capacitance:
0.32 to 0.4 pF
Responsivity/Photosensitivity:
0.85 to 1.05 A/W
Package Type:
Ceramic, Submount, TO-Can
Configuration:
Single
Module:
No
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Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
150 to 1000 nA
Capacitance:
125 to 150 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single)
Module:
No
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Description: One Direction Position Sensing Detector
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 pA to 12.8 nA
Capacitance:
15 to 39 pF
Responsivity/Photosensitivity:
0.21 to 0.51 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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