Photodiodes - Hamamatsu Photonics - Page 7

376 Photodiodes from Hamamatsu Photonics meet your specification.
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  • Manufacturer : Hamamatsu Photonics
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 2 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
0.45 to 0.6 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 10 nA
Capacitance:
50 pF
Responsivity/Photosensitivity:
0.72 A/W
Package Type:
Surface Mount, Chip, Ceramic
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 10 nA
Capacitance:
50 pF
Responsivity/Photosensitivity:
0.72 A/W
Package Type:
Surface Mount, Chip, Ceramic
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1060 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1060 nm
Operation Mode:
Photoconductive
Dark Current:
0.07 to 1 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
0.44 to 0.64 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1000 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 0.5 nA
Capacitance:
3 pF
Responsivity/Photosensitivity:
0.44 to 0.57 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1000 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.001 to 0.1 nA
Capacitance:
1.6 pF
Responsivity/Photosensitivity:
0.44 to 0.52 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1000 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.001 to 0.1 nA
Capacitance:
1.6 pF
Responsivity/Photosensitivity:
0.44 to 0.52 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 360 to 1120 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
360 to 1120 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 10 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.44 to 0.52 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 380 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
380 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.4 to 10 nA
Capacitance:
60 to 90 pF
Responsivity/Photosensitivity:
0.63 A/W
Package Type:
Surface Mount, Chip
Configuration:
Array
Module:
No
more info
Description: Silicon PIN photodiode from 380 to 1000 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
380 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 500 pA
Capacitance:
2 to 3 pF
Responsivity/Photosensitivity:
0.6 to 0.64 A/W
Package Type:
Surface Mount
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 0.75 nA
Capacitance:
15 to 20 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
Ceramic, Surface Mount
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 4 nA
Capacitance:
55 to 120 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
Ceramic, Surface Mount
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 5 nA
Capacitance:
100 to 160 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 1.5 nA
Capacitance:
25 to 40 pF
Responsivity/Photosensitivity:
0.8 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
2.5 to 12.5 nA
Capacitance:
450 to 1500 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
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