Photodiodes - Hamamatsu Photonics - Page 7
376 Photodiodes from Hamamatsu Photonics meet your specification.
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Description: Silicon PIN photodiode from 320 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.05 to 1 nA
Responsivity/Photosensitivity:
0.45 to 0.6 A/W
more info
Description: InGaAs PIN photodiode from 0.9 to 2.1 µm
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 2.1 µm
Operation Mode:
Photovoltaic
Dark Current:
500 to 5000 nA
Capacitance:
1000 to 2000 pF
Responsivity/Photosensitivity:
1 to 1.2 A/W
more info
Description: Ceramic Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
50 to 500 pA
Responsivity/Photosensitivity:
0.1 to 0.5 A/W
more info
Description: Silicon PIN photodiode from 320 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Responsivity/Photosensitivity:
0.45 to 0.6 A/W
more info
Description: Silicon PIN photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 30 nA
Responsivity/Photosensitivity:
0.08 to 0.5 A/W
more info
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
50 to 100 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
more info
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
50 to 100 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
more info
Description: Silicon PIN photodiode from 320 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 1 nA
Responsivity/Photosensitivity:
0.4 to 0.5 A/W
Package Type:
Surface Mount
more info
Description: TO-Can Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.1 to 0.12 A/W
more info
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.4 to 0.62 A/W
more info
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
50 to 100 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
more info
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Capacitance:
50 to 100 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
more info
Description: TO-Can Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.1 to 0.12 A/W
more info
Description: Silicon PIN photodiode from 380 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
380 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 500 pA
Responsivity/Photosensitivity:
0.5 to 0.54 A/W
Package Type:
Surface Mount
more info
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
380 to 670 mA/W
more info
91 - 105 of 376 Photodiodes
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