Photodiodes - Page 8

273 Photodiodes from 15 Manufacturers meet your specification.
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  • Package Type : Ceramic
  • Wavelength Range : 320 to 1100 nm
Description: High Speed InGaAs Photodiodes Mounted on Wedge Ceramic Packages
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 20 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
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Description: SILICON QUADRANT PHOTODIODE
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
20 to 390 pA
Capacitance:
30 to 110 pF
Responsivity/Photosensitivity:
0.57 to 0.64 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.63 µm
Operation Mode:
Photoconductive
Dark Current:
8 to 25 nA
Capacitance:
1.8 to 2.2 pF
Responsivity/Photosensitivity:
0.85 to 1.05 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: Selective wavelength photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
360 to 540 nm
Operation Mode:
Photoconductive
Dark Current:
28 to 59 pA
Capacitance:
22 to 75 pF
Responsivity/Photosensitivity:
0.22 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.4 nA
Capacitance:
1 to 1.5 pF
Responsivity/Photosensitivity:
0.75 to 0.95 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
1 to 2 nA
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
Package Type:
Ceramic, Chip
Configuration:
Single
Module:
No
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Description: Ceramic Silicon photodiode from 320 to 730 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 730 nm
Operation Mode:
Photoconductive
Dark Current:
10 pA
Capacitance:
700 pF
Responsivity/Photosensitivity:
0.19 to 0.3 A/W
Package Type:
Ceramic
Module:
No
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Description: Silicon PIN Photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 15 nA
Capacitance:
48 to 80 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
Ceramic
Configuration:
Single
Channels:
Single
Module:
No
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Description: Chip Silicon PIN photodiode with dark current of 8 to 30 nA
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
780 nm
Operation Mode:
Photoconductive
Dark Current:
8 to 30 nA
Capacitance:
25 to 40 pF
Package Type:
Ceramic
Configuration:
Single
Module:
No
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Description: Silicon PIN photodiode from 700 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
700 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 10 nA
Capacitance:
40 to 80 pF
Responsivity/Photosensitivity:
0.50 to 0.55 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
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Description: High Speed InGaAs Photodiodes Mounted on Wraparound Ceramic
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 20 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.80 to 0.95 A/W
Package Type:
Ceramic
Channels:
Single
Module:
No
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Description: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors (PSD)
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
670 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 100 nA
Capacitance:
5 to 9 pF
Responsivity/Photosensitivity:
0.4 A/W
Package Type:
Ceramic, DIP
Configuration:
Array
Channels:
Single
Module:
No
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Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 30 pA
Capacitance:
20 to 40 pF
Responsivity/Photosensitivity:
380 to 670 mA/W
Package Type:
Ceramic
Configuration:
Array
Module:
No
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Description: Silicon PIN Photodiode Array
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 5 nA
Capacitance:
25 to 128 pF
Responsivity/Photosensitivity:
0.38 to 0.64 A/W
Package Type:
Ceramic
Configuration:
Array
Channels:
Single
Module:
No
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Description: Fully Depleted Photodiodes
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
950 nm
Operation Mode:
Photoconductive
Dark Current:
2 to 10 nA
Capacitance:
40 to 45 pF
Responsivity/Photosensitivity:
0.60 A/W
Package Type:
Ceramic
Channels:
Single)
Module:
No
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