Photodiodes - Page 8

802 Photodiodes from 30 Manufacturers meet your specification.
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  • Package Type : TO-Can
  • Wavelength Range : 400 to 1100 nm
Description: InGaAs, PIN Photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
5 to 10 nA
Capacitance:
400 to 800 pF
Responsivity/Photosensitivity:
0.1 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 900 to 1700 nm KP-M InGaAs Photodiodes for Monitoring with TO-Can package
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
400 pA
Capacitance:
5 pF
Responsivity/Photosensitivity:
0.8 to 0.9 A/W
Package Type:
TO-Can
Module:
No
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Description: 50 mm2 Active Area Quadrant PIN Photodiode with TO-Can package
Photodetector Type:
PIN
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Channels:
Quad
Module:
No
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Description: 200 to 1000 nm UV-VIS TO-8 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
200 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
3 to 100 nA
Capacitance:
320 pF
Responsivity/Photosensitivity:
0.42 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
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Description: Ge Photodiode, 220 ns Rise Time, 800 - 1800 nm, Ø5 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
Germanium
Wavelength Range:
800 to 1800 nm
Operation Mode:
Photovoltaic
Dark Current:
60 µA
Capacitance:
1800 pF
Responsivity/Photosensitivity:
0.85 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: Silicon Avalanche photodiode from 400 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.03 to 1 nA
Capacitance:
1 pF
Responsivity/Photosensitivity:
0.57 A/W
Package Type:
TO-Can
Module:
No
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Description: Silicon, InGaAs Avalanche photodiode from 900 to 1700 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA (Reverse)
Capacitance:
6 pF
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
2 pA
Capacitance:
8 nF
Responsivity/Photosensitivity:
0.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 0.3mm Extended InGaAs Photodiodes
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 to 2700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
13 µA
Capacitance:
100 to 10000 pF
Responsivity/Photosensitivity:
0.9 to 1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 500 µm Diameter Circular Active Area Avalanche Photodiode with TO-Can package
Photodetector Type:
Avalanche
Wavelength Range:
750 to 910 nm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 2 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
38 to 49 A/W
Package Type:
TO-Can
Module:
No
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Description: InGaAs PIN photodiode from 850 to 1700 nm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
850 to 1700 nm
Operation Mode:
Photoconductive
Dark Current:
<0.4 nA
Capacitance:
0.3 pF
Responsivity/Photosensitivity:
>0.85 to 0.9 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 440 to 1100 nm VIS-NIR TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.2 to 2 nA
Capacitance:
1.1 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
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Description: GaAs PIN photodiode from 770 to 860 nm
Photodetector Type:
PIN
Photodiode Material:
GaAs
Wavelength Range:
770 to 860 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 nA
Capacitance:
200 to 800 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: InGaAs PIN Photodiodes, TO-46, Lens Cap, Active Area 500um
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
1 to 1.65 µm
Operation Mode:
Photoconductive
Dark Current:
1.5 to 3 nA
Capacitance:
20 pF
Responsivity/Photosensitivity:
0.85 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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