Photodiodes - Hamamatsu Photonics - Page 9
376 Photodiodes from Hamamatsu Photonics meet your specification.
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Description: TO-Can Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photovoltaic
more info
Description: Silicon PIN photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 0.2 nA
Responsivity/Photosensitivity:
0.45 A/W
more info
Description: Ceramic Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.1 to 0.12 A/W
more info
Description: Ceramic Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.3 to 0.35 A/W
more info
Description: Silicon PIN photodiode from 760 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
760 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 10 nA
Responsivity/Photosensitivity:
0.25 to 0.56 A/W
more info
Description: Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 300 pA
Capacitance:
70 to 100 pF
Responsivity/Photosensitivity:
0.1 to 0.54 A/W
Package Type:
Chip, Surface Mount
more info
Description: Chip Silicon PIN photodiode with dark current of 10 to 100 nA
Photodiode Material:
Silicon (Si)
Operation Mode:
Photoconductive
Dark Current:
10 to 100 nA
more info
Description: Ceramic Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.26 to 0.5 A/W
more info
Description: Ceramic Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photovoltaic
more info
Description: Surface Mount Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 1 nA
Responsivity/Photosensitivity:
0.6 to 0.7 A/W
Package Type:
Surface Mount
more info
Description: Surface Mount Silicon photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.01 to 1 nA
Capacitance:
200 to 400 pF
Responsivity/Photosensitivity:
0.55 to 0.65 A/W
Package Type:
Surface Mount
more info
Description: Silicon PIN photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.22 to 0.66 A/W
more info
Description: Ceramic Silicon photodiode from 340 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1100 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
380 to 670 mA/W
more info
Description: TO-Can Silicon photodiode from 271 to 279 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
271 to 279 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
6 to 10 A/W
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Responsivity/Photosensitivity:
0.45 to 0.72 A/W
Package Type:
Surface Mount, Ceramic, Chip
more info
121 - 135 of 376 Photodiodes
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