Photodiodes - Hamamatsu Photonics - Page 9

376 Photodiodes from Hamamatsu Photonics meet your specification.
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  • Manufacturer : Hamamatsu Photonics
Description: Silicon PIN photodiode from 320 to 1000 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
1 to 100 pA
Capacitance:
0.8 to 1.2 pF
Responsivity/Photosensitivity:
0.2 to 0.25 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
30 pA
Capacitance:
65 pF
Responsivity/Photosensitivity:
0.1 to 0.12 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 380 to 780 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
380 to 780 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 50 pA
Capacitance:
150 pF
Responsivity/Photosensitivity:
0.22 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 190 to 1100 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1100 nm
Operation Mode:
Photovoltaic
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: TO-Can Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
50 pA
Capacitance:
240 pF
Responsivity/Photosensitivity:
0.38 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.15 to 0.75 nA
Capacitance:
15 to 20 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
Ceramic, Surface Mount
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.87 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.87 µm
Operation Mode:
Photovoltaic
Dark Current:
0.1 to 1 nA
Capacitance:
22 to 50 pF
Responsivity/Photosensitivity:
0.9 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 340 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
5 pA
Capacitance:
160 pF
Responsivity/Photosensitivity:
0.39 to 0.43 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
20 pA
Capacitance:
950 pF
Responsivity/Photosensitivity:
0.1 to 0.12 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Ceramic Silicon photodiode from 340 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
340 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
20 pA
Capacitance:
950 pF
Responsivity/Photosensitivity:
0.39 to 0.43 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.8 to 4 nA
Capacitance:
55 to 120 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
Ceramic, Surface Mount
Module:
No
more info
Description: Ceramic Silicon photodiode from 190 to 1000 nm
Photodiode Material:
Silicon (Si)
Wavelength Range:
190 to 1000 nm
Operation Mode:
Photoconductive
Dark Current:
5 pA
Capacitance:
170 pF
Responsivity/Photosensitivity:
0.1 to 0.12 A/W
Package Type:
Ceramic
Configuration:
Single
Module:
No
more info
Description: Silicon PIN photodiode from 320 to 1100 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
320 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.3 to 2 nA
Capacitance:
10 pF
Responsivity/Photosensitivity:
0.72 A/W
Package Type:
Surface Mount, Chip, Ceramic
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
2.5 to 12.5 nA
Capacitance:
450 to 1500 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
Indium Gallium Arsenide (InGaAs)
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
1 to 5 nA
Capacitance:
90 pF
Responsivity/Photosensitivity:
0.8 to 1.1 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
more info
121 - 135 of 376 Photodiodes

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