Photodiodes - Page 9

802 Photodiodes from 30 Manufacturers meet your specification.
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  • Package Type : TO-Can
  • Wavelength Range : 400 to 1100 nm
Description: 0.6 µm to 1.7 µm, InGaAs PIN Photodiodes for Optical Powering Applications
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.6 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
20 to 50 pF
Responsivity/Photosensitivity:
0.2 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: Silicon, InGaAs Avalanche photodiode from 700 to 1100 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
700 to 1100 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: This PIN-photodiode consists of a large chip with 1.3x1.3mm active area mounted on the TO-18 stem and is hermetical sealed by metal can with ball lens
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
10 nA
Capacitance:
6 pF
Package Type:
Chip, TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: Silicon avalanched photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
1.2 pF
Responsivity/Photosensitivity:
50 to 55 A/W
Package Type:
TO-Can
Configuration:
Array
Channels:
Single
Module:
No
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Description: InGaAs Photodiode, 25 ns Rise Time, 800-2600 nm, Ø1.0 mm Active Area
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
800 to 2600 nm
Operation Mode:
Photovoltaic
Dark Current:
3 µA
Capacitance:
500 pF
Responsivity/Photosensitivity:
1.3 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: 1040 nm PD series photodiode with Chip, PCB, TO-8 Package
Photodiode Material:
Silicon
Wavelength Range:
1040 nm
Operation Mode:
Photoconductive
Dark Current:
700 pA
Capacitance:
110 pF
Responsivity/Photosensitivity:
0.2 to 0.81 A/W
Package Type:
Chip, PCB, TO-Can
Module:
No
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Description: 50um InGaAs APD Pigtailed Photodiodes
Photodetector Type:
Avalanche
Photodiode Material:
InGaAs
Wavelength Range:
900 to 1700 nm
Operation Mode:
Photoconductive, Photovoltaic
Dark Current:
2 nA
Capacitance:
0.5 pF
Responsivity/Photosensitivity:
8.5 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: 1 mm² active area VIS/NIR-detector Silicon-photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon (Si)
Wavelength Range:
400 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
1 nA
Capacitance:
40 pF
Responsivity/Photosensitivity:
0.62 A/W
Package Type:
TO-Can
Module:
No
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Description: 440 to 1100 nm VIS-NIR TO-18 Silicon Photoconductive Photodiode
Photodetector Type:
Avalanche
Photodiode Material:
Silicon (Si)
Wavelength Range:
440 to 1100 nm
Operation Mode:
Photoconductive
Dark Current:
0.1 to 1 nA
Capacitance:
0.5 pF
Responsivity/Photosensitivity:
0.52 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
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Photodiode Material:
InGaAs
Wavelength Range:
800 to 1700 nm
Operation Mode:
Photovoltaic
Dark Current:
5 to 50 nA
Capacitance:
70 to 275 pF
Responsivity/Photosensitivity:
0.9 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Quad
Module:
No
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Description: InGaAs PIN photodiode from 0.9 to 1.7 µm
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
0.9 to 1.7 µm
Operation Mode:
Photoconductive
Dark Current:
0.5 to 1 nA
Capacitance:
60 to 160 pF
Responsivity/Photosensitivity:
0.1 to 0.95 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Photodetector Type:
Avalanche
Photodiode Material:
Silicon
Wavelength Range:
800 nm
Operation Mode:
Photoconductive
Dark Current:
0.02 to 0.4 nA
Capacitance:
1.5 pF
Responsivity/Photosensitivity:
35 to 50 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: Silicon, InGaAs Avalanche photodiode from 400 to 1000 nm
Photodetector Type:
Avalanche
Photodiode Material:
Silicon, InGaAs
Wavelength Range:
400 to 1000 nm
Operation Mode:
Photovoltaic
Package Type:
TO-Can
Configuration:
Single
Module:
No
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Description: This PIN-photodiode consists of a large chip with 2.0x2.0mm active area mounted on the TO-46 stem and is hermetical sealed by metal can with ball lens
Photodetector Type:
PIN
Photodiode Material:
InGaAs
Wavelength Range:
900 nm
Operation Mode:
Photoconductive
Dark Current:
5 to 30 nA
Capacitance:
18 pF
Package Type:
Chip, TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: RGB COLOR SENSOR photodiode
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
460 nm, 540 nm, 620 nm
Operation Mode:
Photoconductive
Dark Current:
10 to 20 pA
Capacitance:
32 to 90 pF
Responsivity/Photosensitivity:
0.15 to 0.30 A/W
Package Type:
TO-Can
Configuration:
Single
Channels:
Single
Module:
No
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Description: Silicon PIN Photodiode from 400 to 1150 nm
Photodetector Type:
PIN
Photodiode Material:
Silicon
Wavelength Range:
400 to 1150 nm
Operation Mode:
Photoconductive
Dark Current:
11 to 20 nA
Capacitance:
2.5 pF
Responsivity/Photosensitivity:
0.44 to 0.70 A/W
Package Type:
TO-Can
Configuration:
Single
Module:
No
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