Phototransistors - Marktech Optoelectronics
7 Phototransistors from Marktech Optoelectronics meet your specification.
Phototransistors from Marktech Optoelectronics are listed on GoPhotonics. We have compiled a list of Phototransistors from the Marktech Optoelectronics website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Marktech Optoelectronics and their distributors in your region.
Selected Filters Reset All Manufacturer : Marktech Optoelectronics
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
100 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
250 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
20 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
more info
Description: 880 nm Phototransistor for Optical Switches & Detector Applications
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
250 mW
more info
Description: 880 nm Phototransistor for Sensing Applications
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
250 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
250 mW
more info
Description: 880 nm Phototransistor for Edge Sensing & Smoke Detector Applications
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
150 mW
more info
1 - 7 of 7 Phototransistors
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