Phototransistors - Marktech Optoelectronics

7 Phototransistors from Marktech Optoelectronics meet your specification.
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  • Manufacturer : Marktech Optoelectronics
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
20 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
80 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
100 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
150 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
250 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
250 mW
more info
Description: 880 nm Phototransistor for Sensing Applications
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
250 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
250 mW
more info
1 - 7 of 7 Phototransistors
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Collector Emitter Voltage (Breakdown) (V)  

Collector Emitter Voltage(Saturation) (V)  

Emitter Collector Voltage(Breakdown) (V)  

On-State Collector Current (mA)  

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