Phototransistors - Ushio Inc.

5 Phototransistors from Ushio Inc. meet your specification.
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  • Manufacturer : Ushio Inc.
Description: This phototransistor consists of a chip with 0.6*0.6mm active area mounted on a lead frame with a F5 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info
Description: This phototransistor consists of a chip with 0.8*0.8mm active area mounted on a lead frame with a F5 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
10 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info
Description: This phototransistor consists of a chip with 0.6*0.6mm active area mounted on a lead frame with a F3 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info
Description: This phototransistor consists of a chip with 0.8*0.8mm active area mounted on a lead frame with a F3 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±25°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
10 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info
Description: This phototransistor consists of a chip with 0.6x0.6mm active area mounted in a ceramic package and covered with silicone
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
200 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info
1 - 5 of 5 Phototransistors
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Emitter Collector Voltage(Breakdown) (V)  

On-State Collector Current (mA)  

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