Phototransistors

27 Phototransistors from 2 Manufacturers meet your specification.
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  • Manufacturer : Light In Motion, Ushio Inc.
Description: This phototransistor consists of a chip with 0.6*0.6mm active area mounted on a lead frame with a F3 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
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Phototransistor Type:
Miniature Phototransistor
Mounting Type:
Surface Mount
Wavelength(Spectral Sensitivity):
730 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector Emitter Voltage(Saturation):
0.4 V
On-State Collector Current:
1.5 to 1.8 mA
Power Dissipation:
75 mW
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Description: This phototransistor consists of a chip with 0.8*0.8mm active area mounted on a lead frame with a F5 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
10 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
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Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole, Leaded
Collector Emitter Voltage (Breakdown):
50 V
Collector Emitter Voltage(Saturation):
0.4 V
On-State Collector Current:
0.16 mA
Power Dissipation:
300 to 600 mW
more info Similar products from this company
Description: This phototransistor consists of a chip with 0.6*0.6mm active area mounted on a lead frame with a F5 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info Similar products from this company
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Collector Emitter Voltage (Breakdown):
45 V
Collector Emitter Voltage(Saturation):
0.40 V
On-State Collector Current:
2 mA
Power Dissipation:
300 to 600 mW
more info Similar products from this company
Description: This phototransistor consists of a chip with 0.6x0.6mm active area mounted in a ceramic package and covered with silicone
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
200 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info Similar products from this company
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole, Leaded
Collector Emitter Voltage (Breakdown):
45 V
Collector Emitter Voltage(Saturation):
0.40 V
On-State Collector Current:
1 mA
Power Dissipation:
300 to 600 mW
more info Similar products from this company
Description: This phototransistor consists of a chip with 0.8*0.8mm active area mounted on a lead frame with a F3 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±25°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
10 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info Similar products from this company
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Collector Emitter Voltage (Breakdown):
45 V
Collector Emitter Voltage(Saturation):
0.40 V
On-State Collector Current:
1 mA
Power Dissipation:
300 to 600 mW
more info Similar products from this company
1 - 10 of 27 Phototransistors
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