Phototransistors - OSRAM

38 Phototransistors from OSRAM meet your specification.
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Description:3 mm (T1) Plastic Package, with or w/o Daylight Filter, Half Angle ±12 °
Phototransistor Type:
Phototransistor
Wavelength(Spectral Sensitivity):
380 to 1150 nm
Collector Emitter Voltage (Breakdown):
35 V
Collector-Dark Current:
1 to 50 nA
Collector Emitter Voltage(Saturation):
200 mV
Power Dissipation:
165 mW
more info
Description:SMT Smart DIL package, 0.55 mm2 radiant sensitive area
Phototransistor Type:
Phototransistor
Mounting Type:
Surface Mount
Wavelength(Spectral Sensitivity):
460 to 1080 nm
Collector Emitter Voltage (Breakdown):
20 to 70 V
Collector-Dark Current:
3 to 10 nA
Collector Emitter Voltage(Saturation):
170 mV
Emitter Collector Voltage(Breakdown):
7 V
Power Dissipation:
120 mW
more info
Description:5 mm (T1 ¾) Plastic Package, with or w/o Daylight Filter, Half Angle ±40 °
Phototransistor Type:
Phototransistor
Wavelength(Spectral Sensitivity):
460 to 1080 nm
Collector Emitter Voltage (Breakdown):
70 V
Collector-Dark Current:
3 to 200 nA
Collector Emitter Voltage(Saturation):
150 mV
Power Dissipation:
200 mW
more info
Description:Phototransistors in miniature array
Phototransistor Type:
Phototransistor
Wavelength(Spectral Sensitivity):
450 to 1100 nm
Collector Emitter Voltage (Breakdown):
35 V
Collector-Dark Current:
1 to 50 nA
Collector Emitter Voltage(Saturation):
150 mV
Emitter Collector Voltage(Breakdown):
7 V
Power Dissipation:
90 mW
more info
Description:SMT MIDLED package, Top-and Sidelooker, half angle +-20°
Phototransistor Type:
Phototransistor
Mounting Type:
Surface Mount
Wavelength(Spectral Sensitivity):
500 to 1100 nm
Collector Emitter Voltage (Breakdown):
35 V
Collector-Dark Current:
1 to 50 nA
Collector Emitter Voltage(Saturation):
150 mV
Emitter Collector Voltage(Breakdown):
7 V
Power Dissipation:
130 mW
more info
Description:SMT SmartLED Package 0603
Phototransistor Type:
Phototransistor
Mounting Type:
Surface Mount
Viewing Angle:
80 Degree
Wavelength(Spectral Sensitivity):
420 to 1100 nm
Collector Emitter Voltage (Breakdown):
15 to 30 V
Collector-Dark Current:
1 to 50 nA
Collector Emitter Voltage(Saturation):
140 mV
Emitter Collector Voltage(Breakdown):
7 V
Power Dissipation:
130 mW
more info
Description:SMT SIDELED Package, with or w/o Daylight Filter
Phototransistor Type:
Phototransistor
Mounting Type:
Surface Mount
Wavelength(Spectral Sensitivity):
750 to 1120 nm
Collector Emitter Voltage (Breakdown):
35 V
Collector-Dark Current:
1 to 50 nA
Collector Emitter Voltage(Saturation):
150 mV
Power Dissipation:
165 mW
more info
Description:Ambient light sensor with improved Vlambda Characteristics in SMT Chipled Package
Phototransistor Type:
Phototransistor
Mounting Type:
Surface Mount
Wavelength(Spectral Sensitivity):
470 to 670 nm
Collector Emitter Voltage (Breakdown):
5.5 V
Collector-Dark Current:
3 to 50 nA
Collector Emitter Voltage(Saturation):
130 mV
Emitter Collector Voltage(Breakdown):
0.5 V
more info
Description:3 mm (T1) Plastic Package, with or w/o Daylight Filter, Half Angle ±12 °
Phototransistor Type:
Phototransistor
Wavelength(Spectral Sensitivity):
730 to 1120 nm
Collector Emitter Voltage (Breakdown):
35 V
Collector-Dark Current:
1 to 50 nA
Collector Emitter Voltage(Saturation):
200 mV
Power Dissipation:
165 mW
more info
Description:Large area Phototransistor in SMT Package
Phototransistor Type:
Phototransistor
Mounting Type:
Surface Mount
Wavelength(Spectral Sensitivity):
460 to 1080 nm
Collector Emitter Voltage (Breakdown):
20 to 70 V
Collector-Dark Current:
3 to 200 nA
Collector Emitter Voltage(Saturation):
170 to 250 mV
Emitter Collector Voltage(Breakdown):
7 V
Power Dissipation:
120 mW
more info