Phototransistors - Chip

10 Phototransistors from 3 Manufacturers meet your specification.
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Mounting Type : Chip  reset
Description:This phototransistor consists of a chip with 0.6*0.6mm active area mounted on a lead frame with a F3 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info
Description:Phototransistor 20 mil
Phototransistor Type:
Phototransistor
Mounting Type:
Chip
Viewing Angle:
120 °
Wavelength(Spectral Sensitivity):
825 nm
Collector Emitter Voltage (Breakdown):
70 V
Collector-Dark Current:
1 nA
Emitter Collector Voltage(Breakdown):
5 V
more info
Description:This phototransistor consists of a chip with 0.8*0.8mm active area mounted on a lead frame with a F5 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
10 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info
Description:Phototransistor ambient light 28 mil
Phototransistor Type:
Phototransistor
Mounting Type:
Chip
Viewing Angle:
120 °
Wavelength(Spectral Sensitivity):
570 nm
Collector Emitter Voltage (Breakdown):
6 V
Collector-Dark Current:
3 to 50 nA
Emitter Collector Voltage(Breakdown):
1.5 V
more info
Description:This phototransistor consists of a chip with 0.6*0.6mm active area mounted on a lead frame with a F5 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info
Description:This phototransistor consists of a chip with 0.6x0.6mm active area mounted in a ceramic package and covered with silicone
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
200 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info
Description:This phototransistor consists of a chip with 0.8*0.8mm active area mounted on a lead frame with a F3 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±25°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
10 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Chip
Wavelength(Spectral Sensitivity):
620 to 1000 nm
Collector Emitter Voltage (Breakdown):
80 V
Collector-Dark Current:
1 to 50 nA
Emitter Collector Voltage(Breakdown):
7.8 V
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Chip
Wavelength(Spectral Sensitivity):
480 to 1080 nm
Collector Emitter Voltage (Breakdown):
85 V
Collector-Dark Current:
1 to 50 nA
Emitter Collector Voltage(Breakdown):
7.8 V
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Chip
Wavelength(Spectral Sensitivity):
440 to 800 nm
Collector Emitter Voltage (Breakdown):
6 V
Collector-Dark Current:
3 to 50 nA
Collector Emitter Voltage(Saturation):
0.1 V
Emitter Collector Voltage(Breakdown):
1.5 V
more info