Phototransistors - Leaded

29 Phototransistors from 5 Manufacturers meet your specification.
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Mounting Type : Leaded  reset
Phototransistor Type:
Photo Transistor
Mounting Type:
Leaded
Wavelength(Spectral Sensitivity):
850 to 980 nm
Collector Emitter Voltage (Breakdown):
70 V
Collector-Dark Current:
1 to 100 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
100 mW
more info
Description:This phototransistor consists of a chip with 0.6*0.6mm active area mounted on a lead frame with a F3 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info
Description:This phototransistor consists of a chip with 0.8*0.8mm active area mounted on a lead frame with a F5 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
10 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole, Leaded
Collector Emitter Voltage (Breakdown):
0.25 to 0.5 V
Collector-Dark Current:
200 nA
On-State Collector Current:
20 mA
Power Dissipation:
100 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole, Leaded
Collector Emitter Voltage (Breakdown):
50 V
Collector Emitter Voltage(Saturation):
0.4 V
On-State Collector Current:
0.16 mA
Power Dissipation:
300 to 600 mW
more info
Description:This phototransistor consists of a chip with 0.6*0.6mm active area mounted on a lead frame with a F5 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Leaded
Wavelength(Spectral Sensitivity):
450 to 1080 nm
Collector Emitter Voltage (Breakdown):
70 V
Collector-Dark Current:
1 to 50 nA
Collector Emitter Voltage(Saturation):
130 to 300 mV
Power Dissipation:
150 mW
more info
Description:This phototransistor consists of a chip with 0.6x0.6mm active area mounted in a ceramic package and covered with silicone
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
200 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole, Leaded
Collector Emitter Voltage (Breakdown):
45 V
Collector Emitter Voltage(Saturation):
0.40 V
On-State Collector Current:
1 mA
Power Dissipation:
300 to 600 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Leaded
Wavelength(Spectral Sensitivity):
875 to 1000 nm
Collector Emitter Voltage (Breakdown):
70 V
Collector-Dark Current:
1 to 200 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
100 mW
more info