Phototransistors
8 Phototransistors from Optrans America meet your specification.
Selected Filters Reset All Mounting Type : Through-Hole Manufacturer : Optrans America
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
250 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
250 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
250 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
100 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
250 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
20 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
more info
Description: 450 nm - 1050 nm, Phototransistor for Optical Switches & Edge Sensing Applications
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
450 to 1050 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
200 mW
more info
Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
450 to 1050 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
200 mW
more info
1 - 8 of 8 Phototransistors
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