Phototransistors

3 Phototransistors from NTE Electronics, Inc meet your specification.
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  • Phototransistor Type : Photodarlington
  • Manufacturer : NTE Electronics, Inc
Phototransistor Type:
Photodarlington
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
860 nm
Collector Emitter Voltage (Breakdown):
35 V
Collector-Dark Current:
10 uA
Collector Emitter Voltage(Saturation):
0.7 to 1 V
On-State Collector Current:
1.5 to 4 mA
Power Dissipation:
75 mW
more info
Phototransistor Type:
Photodarlington
Mounting Type:
Through-Hole
Collector Emitter Voltage (Breakdown):
50 V
Collector-Dark Current:
10 to 100 nA
Collector Emitter Voltage(Saturation):
0.6 to 1 V
Emitter Collector Voltage(Breakdown):
10 to 15.5 V
Power Dissipation:
250 mW
more info
Phototransistor Type:
Photodarlington
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
860 nm
Collector Emitter Voltage (Breakdown):
35 V
Collector-Dark Current:
10 uA
Collector Emitter Voltage(Saturation):
1 V
On-State Collector Current:
0.2 to 0.8 mA
Power Dissipation:
75 mW
more info
1 - 3 of 3 Phototransistors
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