Phototransistors

15 Phototransistors from 5 Manufacturers meet your specification.
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  • Collector Emitter Voltage (Breakdown) : 1 to 10 V
Description: Sidelooker Phototransistor
Phototransistor Type:
Phototransistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
940 nm
Collector Emitter Voltage (Breakdown):
5 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.4 V
Emitter Collector Voltage(Breakdown):
30 V
Power Dissipation:
75 mW
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Description: Phototransistor ambient light 28 mil
Phototransistor Type:
Phototransistor
Mounting Type:
Chip
Viewing Angle:
120 °
Wavelength(Spectral Sensitivity):
570 nm
Collector Emitter Voltage (Breakdown):
6 V
Collector-Dark Current:
3 to 50 nA
Emitter Collector Voltage(Breakdown):
1.5 V
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Description: 3mm Phototransistor
Phototransistor Type:
Phototransistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
940 nm
Collector Emitter Voltage (Breakdown):
5 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.4 V
Emitter Collector Voltage(Breakdown):
30 V
Power Dissipation:
75 mW
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Description: This phototransistor consists of a chip with 0.8*0.8mm active area mounted on a lead frame with a F5 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
10 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
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Description: Side Face Silicon Phototransistor
Phototransistor Type:
Phototransistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
940 nm
Collector Emitter Voltage (Breakdown):
5 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.4 V
Emitter Collector Voltage(Breakdown):
30 V
Power Dissipation:
75 mW
more info Similar products from this company
Description: 3mm Phototransistor
Phototransistor Type:
Phototransistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
940 nm
Collector Emitter Voltage (Breakdown):
5 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.4 V
Emitter Collector Voltage(Breakdown):
30 V
Power Dissipation:
75 mW
more info Similar products from this company
Description: This phototransistor consists of a chip with 0.8*0.8mm active area mounted on a lead frame with a F3 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±25°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
10 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.3 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
more info Similar products from this company
Description: Side Face Silicon Phototransistor
Phototransistor Type:
Phototransistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
940 nm
Collector Emitter Voltage (Breakdown):
5 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.4 V
Emitter Collector Voltage(Breakdown):
30 V
Power Dissipation:
75 mW
more info Similar products from this company
Phototransistor Type:
Photo Transistor
Mounting Type:
Chip
Wavelength(Spectral Sensitivity):
440 to 800 nm
Collector Emitter Voltage (Breakdown):
6 V
Collector-Dark Current:
3 to 50 nA
Collector Emitter Voltage(Saturation):
0.1 V
Emitter Collector Voltage(Breakdown):
1.5 V
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Description: Ambient light sensor with V-lambda characteristics in T1 (3mm) package
Phototransistor Type:
Phototransistor
Wavelength(Spectral Sensitivity):
350 to 970 nm
Collector Emitter Voltage (Breakdown):
5.5 V
Collector-Dark Current:
3 to 50 nA
Collector Emitter Voltage(Saturation):
100 mV
Emitter Collector Voltage(Breakdown):
0.5 V
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Description: Ambient light sensor with V-lambda Characteristics in SMT Smart DIL package
Phototransistor Type:
Phototransistor
Mounting Type:
Surface Mount
Wavelength(Spectral Sensitivity):
350 to 970 nm
Collector Emitter Voltage (Breakdown):
5.5 V
Collector-Dark Current:
3 to 50 nA
Collector Emitter Voltage(Saturation):
100 mV
Emitter Collector Voltage(Breakdown):
0.5 V
more info Similar products from this company
Description: Ambient light sensor with V-lambda Characteristics in SMT Smart DIL package
Phototransistor Type:
Phototransistor
Mounting Type:
Surface Mount
Collector Emitter Voltage (Breakdown):
5.5 V
Collector-Dark Current:
3 to 50 nA
Collector Emitter Voltage(Saturation):
100 mV
Emitter Collector Voltage(Breakdown):
0.5 V
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Description: Ambient light sensor with Vlambda Characteristics in SMT Chipled Package
Phototransistor Type:
Phototransistor
Mounting Type:
Surface Mount
Wavelength(Spectral Sensitivity):
350 to 950 nm
Collector Emitter Voltage (Breakdown):
5.5 V
Collector-Dark Current:
3 to 50 nA
Collector Emitter Voltage(Saturation):
100 mV
Emitter Collector Voltage(Breakdown):
0.5 V
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Description: Ambient light sensor with improved Vlambda Characteristics in SMT Chipled Package
Phototransistor Type:
Phototransistor
Mounting Type:
Surface Mount
Wavelength(Spectral Sensitivity):
470 to 670 nm
Collector Emitter Voltage (Breakdown):
5.5 V
Collector-Dark Current:
3 to 50 nA
Collector Emitter Voltage(Saturation):
130 mV
Emitter Collector Voltage(Breakdown):
0.5 V
more info Similar products from this company
Description: Ambient light sensor with improved Vlambda Characteristics in SMT Chipled Package
Phototransistor Type:
Phototransistor
Mounting Type:
Surface Mount
Wavelength(Spectral Sensitivity):
350 to 950 nm
Collector Emitter Voltage (Breakdown):
5.5 V
Collector-Dark Current:
3 to 50 nA
Emitter Collector Voltage(Breakdown):
0.5 V
more info Similar products from this company
1 - 15 of 15 Phototransistors
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