Phototransistors - Page 4

258 Phototransistors from 16 Manufacturers meet your specification.
Description: Phototransistor ambient light 28 mil
Phototransistor Type:
Phototransistor
Mounting Type:
Chip
Viewing Angle:
120 °
Wavelength(Spectral Sensitivity):
570 nm
Collector Emitter Voltage (Breakdown):
6 V
Collector-Dark Current:
3 to 50 nA
Emitter Collector Voltage(Breakdown):
1.5 V
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Description: Si Phototransistor
Phototransistor Type:
Phototransistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
700 to 1100 nm
Collector Emitter Voltage (Breakdown):
20 V
Collector-Dark Current:
100 to 200 nA
Collector Emitter Voltage(Saturation):
0.4 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
125 mW
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Description: 3mm Phototransistor
Phototransistor Type:
Phototransistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
940 nm
Collector Emitter Voltage (Breakdown):
5 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.4 V
Emitter Collector Voltage(Breakdown):
30 V
Power Dissipation:
75 mW
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Description: 5 mm (T1 ¾) Plastic Package, with or w/o Daylight Filter, Half Angle ±40 °
Phototransistor Type:
Phototransistor
Wavelength(Spectral Sensitivity):
460 to 1080 nm
Collector Emitter Voltage (Breakdown):
70 V
Collector-Dark Current:
3 to 200 nA
Collector Emitter Voltage(Saturation):
150 mV
Power Dissipation:
200 mW
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Description: 3.0 x 1.5mm SMD NPN Phototransistor Chips
Phototransistor Type:
Phototransistor
Mounting Type:
Surface Mount
Wavelength(Spectral Sensitivity):
420 to 1120 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
0.3 to 0.6 mA
Power Dissipation:
100 mW
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Phototransistor Type:
Photo Transistor
Mounting Type:
Surface Mount
Wavelength(Spectral Sensitivity):
870 to 1050 nm
Collector Emitter Voltage (Breakdown):
70 V
Collector-Dark Current:
1 to 200 nA
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
100 mW
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Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Wavelength(Spectral Sensitivity):
400 to 1100 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
250 mW
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Description: This phototransistor consists of a chip with 0.6*0.6mm active area mounted on a lead frame with a F5 clear epoxy lens
Phototransistor Type:
Phototransistor
Mounting Type:
Chip, Leaded
Viewing Angle:
±40°
Wavelength(Spectral Sensitivity):
900 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.2 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
10 mA
Power Dissipation:
50 mW
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Phototransistor Type:
Phototransistors
Mounting Type:
DIP
Collector Emitter Voltage (Breakdown):
32 V
Collector-Dark Current:
0.5 uA
Collector Emitter Voltage(Saturation):
0.4 V
Emitter Collector Voltage(Breakdown):
5 V
Power Dissipation:
150 mW
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Phototransistor Type:
Photo Transistor
Mounting Type:
Through-Hole
Viewing Angle:
60 Degree
Wavelength(Spectral Sensitivity):
935 nm
Collector Emitter Voltage (Breakdown):
30 V
Collector-Dark Current:
100 nA
Collector Emitter Voltage(Saturation):
0.40 V
Emitter Collector Voltage(Breakdown):
5 V
On-State Collector Current:
0.85 to 7 mA
Power Dissipation:
100 mW
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31 - 40 of 258 Phototransistors
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